K4RAH086VB-BCQK - DDR5 16Gb 4800Mbps DRAM | Samsung
MPN: K4RAH086VB-BCQK ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $4.5 | $4.50 |
| 10 | $4.28 | $42.80 |
| 100 | $3.95 | $395.00 |
| 500 | $3.6 | $1,800.00 |
| 1,000 | $3.25 | $3,250.00 |
Drop-in alternatives for K4RAH086VB-BCQK — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
K4RAH086VB-BCWM
✅ Drop-In✓ In Stock
$4.6 / Unit
View Datasheet →K4RAH086VB-BIQK
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$4.25 / Unit
View Datasheet →K4RAH086VB-BIWM
✅ Drop-In✓ In Stock
$4.85 / Unit
View Datasheet →K4RAH086VE-BCWM
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$7.6 / Unit
View Datasheet →K4RAH086VP-BCWM
✅ Drop-In✓ In Stock
Contact for price
View Datasheet →H5CG48MEBDX014N
✅ Drop-In📋 Reference alternative (not in catalog)
K4RAH086VB-BCQK Maximum Ratings & Electrical Characteristics
| Memory Type | DDR5 SDRAM (Volatile DRAM) |
| Memory Size | 16 Gb |
| Memory Organization | 2G x 8 |
| Data Rate | 4800 Mbps |
| Supply Voltage | 1.1 V |
| Interface | Parallel |
| Technology | DDR5 |
| ECC | On-die ECC |
| Package | FBGA-82 |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Operating Mode | DLL Enabled mode |
| Series | K4RAH0x6VB (DDR5 16Gb B-die family) |
| Packaging | Tray |
K4RAH086VB-BCQK fbga-82 Pin Configuration Guide
Complete pinout information for K4RAH086VB-BCQK (fbga-82 package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for K4RAH086VB-BCQK.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K4RAH086VB-BCQK is suitable for 6 applications: Server Memory Subsystems, AI Acceleration Hardware, High-Performance Computing (HPC), Industrial Controllers and Embedded Computing, Consumer DDR5 Memory Modules (UDIMM/SODIMM), Firmware Boot, Embedded Logging and Replacement Sourcing.
Server Memory Subsystems
The K4RAH086VB-BCQK fits server main memory because its 4800 Mbps data rate and 2G x 8 organization map directly onto standard 64-bit DDR5 channels used in RDIMM and solder-down server designs. On-die ECC reduces soft-error driven corrections at the cell level, complementing platform side-band ECC required in servers. Deployed between the memory controller and the 1.1 V PMIC-managed power tree, the device provides 16 Gb per chip, so a single-rank 16 GB module needs eight devices. Performance consideration: at 4800 Mbps per pin, a 64-bit channel delivers roughly 38.4 GB/s aggregate bandwidth before controller overhead, so trace-length matching and CA compliance-mask adherence are mandatory.
Recommended
AI Acceleration Hardware
AI training and inference cards use the K4RAH086VB-BCQK as host-side and accelerator-attached DDR5 memory where HBM cost must be contained. The 16 Gb density per FBGA-82 device lets AI module designers place high capacity beside the accelerator, and the 1.1 V rail with DDR5 on-module PMIC reduces board power-tree complexity versus DDR4. Because AI workloads are bandwidth hungry, the 4800 Mbps pin speed yields approximately 38.4 GB/s per 64-bit channel; designers typically instantiate multiple channels. Use the DDR5 controller training engine to compensate for dense routing, and verify thermals since sustained AI traffic keeps DRAM near maximum activation currents.
Recommended
High-Performance Computing (HPC)
HPC nodes benefit from the K4RAH086VB-BCQK's balance of density, bandwidth, and efficiency. DDR5's doubled bank groups and 4800 Mbps operation improve effective bandwidth for streaming workloads common in scientific computing, while the 1.1 V supply and ~30% power efficiency gain over DDR4 (per Samsung) cut node-level energy cost, a dominant HPC operating expense. A dual-channel desktop-class node using eight devices reaches 16 GB; server platforms scale to terabytes. Design consideration: on-die ECC improves reliability for long-running jobs, but cluster-level error handling should still assume platform ECC since on-die ECC does not replace link or controller ECC.
Recommended
Industrial Controllers and Embedded Computing
Industrial controllers and COM Express/SMARC computing modules use the K4RAH086VB-BCQK for main memory where DDR5 chipsets are deployed. The FBGA-82 surface-mount package supports solder-down designs that survive vibration better than socketed SO-DIMMs, and distributor overviews explicitly list industrial controllers among target uses. The industrial-temperature sibling K4RAH086VB-BIQK covers harsh environments. At 4800 Mbps, embedded designers should budget careful length-matched routing and reference-plane integrity on 6-8 layer boards; the 1.1 V core rail simplifies the PMIC selection versus DDR4's 1.2 V plus termination rails.
Recommended
Consumer DDR5 Memory Modules (UDIMM/SODIMM)
The K4RAH086VB-BCQK die family ships inside retail DDR5 modules: EE Times identified Samsung K4RAH086VB-class devices (K4RAH046VB die) inside the G.SKILL Trident Z5 DDR5 kit, a PC5-4800 UDIMM. This makes the component the correct rework part for module repair and reballing, and repair kits listing K4RAH086VB-BCQK are commercially available. DDR5 modules integrate a PMIC (5100 class) on-module, so a single replaced device must match both the JEDEC DDR5 ball map and the module's serial-presence-detect programmed vendor data for full compatibility.
Recommended
Firmware Boot, Embedded Logging and Replacement Sourcing
Beyond main memory, the K4RAH086VB-BCQK serves volatile working-memory roles in firmware boot staging, embedded logging buffers, and computing modules, as summarized in the datasheets.globalspec product overview. In logging applications, DDR5's on-die ECC protects buffered telemetry before it is flushed to non-volatile storage such as Samsung NAND (e.g., K9-family parts). The 2G x 8 organization provides 256 MB of working space per device, and the 4800 Mbps rate ensures log bursts do not throttle the host CPU. For replacement sourcing, the same FBGA-82 footprint across the K4RAH086VB family simplifies second-sourcing in long-life embedded programs.
Recommended
Recommended Products Summary
Engineering reference data for K4RAH086VB-BCQK — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K4RAH086VB-BCWM | K4RAH086VB-BIWM | K4RAH086VE-BCWM | H5CG48MEBDX014N |
|---|---|---|---|---|---|
| Package | FBGA-82 | FBGA-82 - same | FBGA-82 - same | FBGA-82 - same | FBGA-82 - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | SK Hynix |
| Memory Size | 16 Gb | 16 Gb | 16 Gb | 16 Gb | 16 Gb |
| Memory Organization | 2G x 8 | 2G x 8 | 2G x 8 | 2G x 8 | 2G x 8 |
| Data Rate | 4800 Mbps | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Supply Voltage | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
| ECC | On-die ECC | On-die ECC | On-die ECC | On-die ECC | On-die ECC (DDR5 standard) |
| Temperature Grade | Commercial (BC prefix) | Commercial | Industrial (BI prefix) | [DATA_NEEDED] | [DATA_NEEDED] |
| Lifecycle Status | Active | Active | Active | Active | Active |
Key Differentiators
- 4800 Mbps speed grade with broad module deployment (vs K4RAH086VB-BCWM)
- Industrial temperature availability in the same footprint (vs K4RAH086VB-BIWM)
- On-die ECC versus DDR4 predecessors like K4A8G165WB (vs K4A8G165WB-BCWE)
Design Notes
Route the DDR5 command/address bus as fly-by topology with length matching per the Samsung K4RAH0x6VB Rev 1.0 specification. The CA and CS input receivers are specified with a defined voltage/timing compliance mask and run in single-data-rate mode, so verify eye masks at 4800 Mbps on your stackup. Keep DQ/DQS length mismatch within the controller's training capture window and simulate reflections on the 1.1 V rail terminations before committing the PCB.
DDR5 moves power management from the motherboard voltage regulator to the module PMIC. For solder-down K4RAH086VB-BCQK designs, you supply the 1.1 V VDD rail directly, so implement proper sequencing, bulk decoupling near each device, and per-ball via fanout for the VDD/VDDQ planes. Estimated: at typical DDR5 device currents in the hundreds of mA range per device at 4800 Mbps, a 16-device subsystem needs a multi-amp rail with low-ESR ceramic bulk capacitance; verify against the datasheet IDD tables for your exact operating pattern.
Do not assume DDR4 drop-in compatibility: DDR5 changes signaling, bank architecture, and power delivery fundamentally, and a DDR4 controller cannot train this device. When substituting speed bins (BCQK vs BCWM/BIWM), the board will function at the slower common speed, but re-run BIOS memory training and margin testing. Beware counterfeit/remarked FBGA-82 DRAM in the open market; buy through authorized channels with lot traceability, as Sourcengine and LimChip emphasize for this part.
Compliance Information
Compliance data was not present in the provided web data. Samsung DRAM products are typically RoHS compliant, but this must be confirmed from the official Samsung product page or certificate before design-in.
