MT40A256M16LY-062E - 4Gb DDR4 SDRAM x16 | Micron
부품 번호: MT40A256M16LY-062E ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $7.44 | $7.44 |
| 10 | $6.85 | $68.50 |
| 100 | $6.2 | $620.00 |
| 500 | $5.75 | $2,875.00 |
| 1,000 | $5.3 | $5,300.00 |
MT40A256M16LY-062E 개요
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is the fourth generation of the JEDEC DDR memory family. A DRAM stores each bit in a capacitor within an integrated circuit, requiring periodic refresh, and its synchronous interface means all operations are timed to a clock signal. In the memory hierarchy, this component sits within DRAM components -> DDR4 SDRAM -> SDRAM -> volatile memory, and serves as the primary working memory for processors and SoCs.
Key features of the MT40A256M16LY-062E include the x16 organization preferred for lower pin-count controllers, auto self-refresh, auto precharge, write leveling, CRC, data mask (DM), dynamic on-chip termination (ODT), and ZQ calibration. The -062E speed grade corresponds to a 19 ns tAA (CL19 at DDR4-2666), and the device operates from a 1.2V core supply, delivering roughly 20 percent lower power than DDR3 at the same data rate.
Architecturally, the device implements the DDR4 bank-group structure, which interleaves precharge and activate operations across four bank groups to raise effective bandwidth without increasing core frequency. The x16 interface uses a 16-bit data path with differential data strobes (UDQS/LDQS) and per-byte data mask, and CRC protects command/address integrity on the CA bus for improved signal integrity at high speeds.
Typical applications include embedded processor main memory, industrial controllers, networking equipment, and automotive/industrial-grade systems (the AUT and IT temperature variants cover -40C to +95C). The 96-FBGA footprint is a de facto standard that multiple DRAM vendors share.
Design consideration: maintain fly-by termination topology for the command/address bus and follow Micron's published routing guidelines for length matching of DQ/DSQS; x16 parts use one ODT value per byte, so program ODT carefully in mixed-width memory subsystems.
This page synthesizes distributor pricing, drop-in alternatives from multiple DRAM vendors, and practical design notes not found in the Micron datasheet alone.
드롭인 대체품: MT40A256M16LY-062E — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: MT40A256M16LY-062E (동일 폼 팩터 및 풋프린트) — 차이점: RoHS Status, Package, Interface, Memory Type, Clock Frequency.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
MT40A256M16LY-062E IT:F
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MT40A256M16LY-062E AUT:F
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MT40A256M16LY-062E:F
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
K4A4G165WG-BCWE
✅ 드롭인✓ 재고 있음
$16.9 / 개
데이터시트 보기 →NT5AD512M16C4-JRU
✅ 드롭인✓ 재고 있음
$83 / 개
데이터시트 보기 →MT40A256M16LY-062E 최대 정격 & 전기적 특성
| 메모리 유형 | DDR4 SDRAM |
| 메모리 크기 | 4 Gbit |
| 메모리 구성 | 256M x16 |
| 인터페이스 | Parallel |
| Clock Frequency | 1.6 GHz |
| Access Time (tAA) | 19 ns |
| Supply Voltage (VDD) | 1.2 V |
| Data Rate Class | DDR4-2666 (062E speed grade) |
| 패키지 | 96-FBGA (7.5 x 13.5 mm) |
| 실장 유형 | Surface Mount |
| Operating Temperature (IT variant) | -40C to +95C |
| Auto Self-Refresh | Yes |
| Auto Precharge | Yes |
| Write Leveling | Yes |
| CRC (Command/Address) | Yes |
| Data Mask (DM) | Yes |
| Dynamic On-Chip Termination (ODT) | Yes |
| ZQ Calibration | Yes |
| FBGA Code | D9XSG (AUT variant) |
| RoHS 상태 | Compliant (F = RoHS/lead-free finish) |
MT40A256M16LY-062E 96-fbga (7.5 x 13.5 mm) 핀 구성 가이드
MT40A256M16LY-062E(96-fbga (7.5 x 13.5 mm) 패키지)의 핀 구성입니다. 이 디지털 IC에는 GPIO, 통신 인터페이스(UART, SPI, I2C), 전원 핀이 포함되어 있습니다. 대체 핀 기능과 구성 옵션은 제조사 데이터시트를 참조하십시오. 임베디드 시스템 설계와 PCB 레이아웃에 필수적입니다.
다음에 대한 상세 핀아웃 데이터 없음: MT40A256M16LY-062E.
다음을 참조하십시오: 데이터시트 전체 핀 구성은 다음을 참조하십시오.
일반적인 애플리케이션
MT40A256M16LY-062E 적합 용도: 6 애플리케이션s: Embedded Processor Main Memory, Industrial Controllers and HMI, Automotive Infotainment and Telematics, Networking and Communication Equipment, Test and Measurement Instruments, Server and Storage Systems.
Embedded Processor Main Memory
The MT40A256M16LY-062E is widely used as the primary volatile memory for embedded ARM and x86 SoCs that expose a 16-bit DDR4 memory controller. The x16 organization matches single-chip memory designs where a 32-bit or 64-bit bus is not needed, saving board space and controller pins. At DDR4-2666 class timing (19 ns tAA, 1.6 GHz clock), a single x16 device delivers roughly 4.25 GB/s of peak read/write bandwidth. Auto self-refresh and auto precharge offload memory management from low-power applications, and the 1.2V supply reduces power versus DDR3L solutions. Layout requires the standard fly-by CA topology with on-chip termination and ZQ calibration to keep signal integrity at speed.
추천
Industrial Controllers and HMI
The IT temperature variant (MT40A256M16LY-062E IT:F), rated -40C to +95C, targets factory automation, PLCs, and human-machine interfaces that operate in unconditioned cabinets. DDR4's CRC on the command/address bus catches CA bus corruption from electrical noise typical of motor drives and switching loads, while dynamic ODT adapts termination as the bus load changes during read/write turnaround. The 4Gb density comfortably hosts Linux-based control stacks with headroom for logging buffers. Designers should validate the full refresh interval at the highest operating temperature, since refresh requirements tighten above 85C, and confirm the IT-grade self-refresh data retention figures from the Micron datasheet before committing the design.
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Automotive Infotainment and Telematics
The MT40A256M16LY-062E AUT:F automotive-grade variant serves telematics control units, digital cockpits, and infotainment head units. Automotive DDR4 from Micron is qualified for the extended -40C to +95C ambient range and withstands the vibration and thermal cycling of vehicle environments; the 96-FBGA solder-ball package provides mechanical robustness on conformally coated boards. Infotainment graphics stacks benefit from the 4.25 GB/s peak bandwidth of the 16-bit DDR4-2666 class interface, typically configured two or four devices deep for 32/64-bit buses. Note the AAT:F automotive suffix has been moved to Micron's obsolete catalog, so new automotive platforms should baseline the AUT:F and verify lifecycle status at design freeze.
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Networking and Communication Equipment
Switches, routers, and 5G small-cell equipment use the MT40A256M16LY-062E for packet buffers, flow tables, and control-plane memory. The bank-group architecture of DDR4 interleaves activate and precharge across groups, sustaining higher effective bandwidth during random-access patterns typical of packet processing. Data mask (UDM/LDM) lets network processors write variable-length packets without read-modify-write overhead, and CRC-protected CA signaling improves reliability in electrically noisy rack environments. The 4Gb x16 device is commonly depopulated in pairs to scale memory width, and its standard 96-FBGA footprint allows pin-compatible second sourcing to Samsung K4A4G165WG-BCWE for supply-chain resilience, subject to memory-controller timing table updates.
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Test and Measurement Instruments
Oscilloscopes, logic analyzers, and signal generators require large acquisition buffers with deterministic access, making DDR4 SDRAM a natural fit. The MT40A256M16LY-062E provides 4Gbit of capture memory in a single 96-FBGA device; multiple devices on a 32- or 64-bit bus aggregate both density and bandwidth for deep-memory waveform capture at high sample rates. ZQ calibration maintains accurate output impedance over the instrument's temperature range, preserving signal integrity on long DQ flights. Designers should budget termination power at 1.2V VDDQ and follow Micron's routing guidelines for length-matched strobe-to-data pairs. The industrial IT:F grade suits bench instruments whose internal temperatures exceed commercial limits.
추천
Server and Storage Systems
Entry-level servers, NAS controllers, and SSDs use 4Gb x16 DDR4 devices like the MT40A256M16LY-062E for controller DRAM: caching metadata, mapping tables, and buffering host I/O. SSD controllers frequently select the x16 organization because their memory controllers are 16- or 32-bit wide, and 4Gb provides sufficient map memory for multi-terabyte NAND arrays when paired appropriately. The 1.2V operation reduces the always-on power budget of standby RAID and NAS appliances. Designers of storage systems should implement periodic scrubbing of the DRAM, since these parts typically do not include on-die ECC in this family, and verify thermal conditions inside dense drive enclosures against the +95C industrial limit.
추천
추천 제품 요약
엔지니어링 참조 데이터: MT40A256M16LY-062E — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | MT40A256M16LY-062E IT:F | MT40A256M16LY-062E AUT:F | K4A4G165WG-BCWE | NT5AD512M16C4-JRU |
|---|---|---|---|---|---|
| Package | 96-FBGA (7.5 x 13.5 mm) | 96-FBGA (7.5 x 13.5 mm) - same | 96-FBGA (7.5 x 13.5 mm) - same | 96-FBGA (7.5 x 13.5 mm) - same | 96-FBGA - same family |
| Brand | Micron Technology | Micron Technology | Micron Technology | Samsung | Nanya Technology |
| Density | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit |
| Organization | 256M x16 | 256M x16 | 256M x16 | 256M x16 | 512M x16 |
| Speed Grade | 062E (DDR4-2666 class, 19 ns) | 062E - same | 062E - same | DDR4-2666 class (BCWE bin) | DDR4-2666 class (JRU bin) |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Operating Temperature | 0C to +85C (commercial base) / extended per suffix | -40C to +95C | -40C to +95C (automotive) | 0C to +85C (commercial) | 0C to +85C (commercial) |
| Qualification Grade | Commercial / industrial per suffix | Industrial (IT) | Automotive (AUT) | Commercial | Commercial |
주요 차별점
- Industrial and automotive temperature options on the same die (vs K4A4G165WG-BCWE)
- Full DDR4 feature set including CRC and dynamic ODT (vs NT5AD512M16C4-JRU)
- Lower operating voltage than DDR3L predecessor (vs MT41K128M16JT-125)
설계 노트
Use fly-by topology for the command/address bus with a single termination point per rank, and length-match DQ to its strobe within the window specified in the Micron DDR4 datasheet (typically a few mils per inch tolerance). At DDR4-2666 class speeds the differential strobes (UDQS/UDQS#, LDQS/LDQS#) set the sampling window, so route each DQ byte lane as a tightly matched group. Enable write leveling during bring-up; the MT40A256M16LY-062E supports it natively to compensate board skew on writes.
The device runs from 1.2V VDD and VDDQ. Estimated: at DDR4-2666 with ODT enabled, per-device current is typically in the hundreds of milliamps range; size the core rail regulator and decoupling network (bulk 100 uF plus distributed 0.1 uF/0.01 uF ceramics at each power ball) for the peak active-read case in the Micron datasheet current tables, not the standby figure. Separate VDDQ planes from VDD and add a ZQ reference resistor (240 ohm, 1 percent) close to the ZQ ball.
Confirm the temperature suffix matches your environment: the commercial :F is not rated for -40C to +95C; specify IT:F or AUT:F. Also note the AAT:F automotive variant appears in Micron's obsolete catalog, so legacy BOMs referencing it must migrate to AUT:F. Refresh timing tightens above 85C per DDR4 JEDEC conventions - verify your controller's refresh rate setting against the highest expected die temperature, and never reuse DDR3L controller timing tables on DDR4.
규정 준수 정보
The :F suffix denotes RoHS-compliant, lead-free finish per Micron part-number conventions and distributor listings. Formal REACH, halogen-free, and conflict-minerals declarations must be obtained from Micron; not present in the provided web data.
