1ED3122MC12HXUMA1 vs 1EDN7116GXTMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci 1ED3122MC12HXUMA1 disebabkan oleh Infineon dan 1EDN7116GXTMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | 1ED3122MC12HXUMA1 | 1EDN7116GXTMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | Power MOSFET Drivers | Power MOSFET Drivers |
| Status Lingkungan Hidup | Aktif | Aktif |
| Product Type | Isolated Gate Driver (single-channel) | — |
| Isolation Technology | Coreless Transformer (CT) | — |
| Isolation Voltage (Vrms) | 5.7 kVrms | — |
| Maximum Transient Isolation (Vpk) | 8 kVpk | — |
| Output Current (source / sink) | 10 A / 9 A | — |
| Configuration | High-side, non-inverting | — |
| Number of Channels | 1 | — |
| Supply Voltage (VCC / VBS) | 8 V to 35 V | — |
| Propagation Delay (typ.) | 30 ns | — |
| Rise Time / Fall Time (typ.) | 15 ns / 30 ns | — |
| Miller Clamp | Active (integrated) | Integrated, active |
| Short-Circuit Clamping | Yes | — |
| UVLO | Primary and secondary side | Yes (VCC and gate-rail monitored) |
| Suhu Operasi | -40 C to +125 C | — |
| Kemasan | PG-DSO-8-66 (300-mil DSO-8) | PG-VSON-10-4 (3.0 mm × 3.0 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | 2 | MSL3 |
| Status RoHS | Compliant | Compliant |
| Fungsi | — | Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs |
| Driver Configuration | — | Non-inverting, single low-side |
| Number of Drivers | — | 1 |
| Peak Source Current | — | 2 A (typ) |
| Peak Sink Current | — | 4 A (typ) |
| Input Type | — | Truly Differential Input (TDI) |
| Supply Voltage (VCC) | — | 4.5 V to 5.5 V |
| Switch-Node Blocking Voltage | — | 200 V (max) |
| Propagation Delay (Typ) | — | 9 ns |
| Rise Time (Typ) | — | 3 ns |
| Fall Time (Typ) | — | 3 ns |
| Quiescent Current (Typ) | — | 0.6 mA |
| Gambaran Suhu Operasi | — | -40 °C to +125 °C |
| Target Switch Technology | — | GaN HEMT (CoolGaN) or Si MOSFET |