1ED3122MC12HXUMA1 vs 1EDN7116GXTMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng 1ED3122MC12HXUMA1 sa pamamagitan ng Infineon at 1EDN7116GXTMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
1ED3122MC12HXUMA1 - 10A Isolated Gate Driver, 5.7kV | Infineon
1ED3122MC12HXUMA1 ✓ NakahandaInfineon
1EDN7116GXTMA1 - 200V Single-Channel GaN Gate Driver IC | Infineon
1EDN7116GXTMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | 1ED3122MC12HXUMA1 | 1EDN7116GXTMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | Power MOSFET Drivers | Power MOSFET Drivers |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Product Type | Isolated Gate Driver (single-channel) | — |
| Isolation Technology | Coreless Transformer (CT) | — |
| Isolation Voltage (Vrms) | 5.7 kVrms | — |
| Maximum Transient Isolation (Vpk) | 8 kVpk | — |
| Output Current (source / sink) | 10 A / 9 A | — |
| Configuration | High-side, non-inverting | — |
| Number of Channels | 1 | — |
| Supply Voltage (VCC / VBS) | 8 V to 35 V | — |
| Propagation Delay (typ.) | 30 ns | — |
| Rise Time / Fall Time (typ.) | 15 ns / 30 ns | — |
| Miller Clamp | Active (integrated) | Integrated, active |
| Short-Circuit Clamping | Yes | — |
| UVLO | Primary and secondary side | Yes (VCC and gate-rail monitored) |
| Temperature na Operasyon | -40 C to +125 C | — |
| Packhaging | PG-DSO-8-66 (300-mil DSO-8) | PG-VSON-10-4 (3.0 mm × 3.0 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | 2 | MSL3 |
| Tindminan RoHS | Compliant | Compliant |
| Fungsi | — | Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs |
| Driver Configuration | — | Non-inverting, single low-side |
| Number of Drivers | — | 1 |
| Peak Source Current | — | 2 A (typ) |
| Peak Sink Current | — | 4 A (typ) |
| Input Type | — | Truly Differential Input (TDI) |
| Supply Voltage (VCC) | — | 4.5 V to 5.5 V |
| Switch-Node Blocking Voltage | — | 200 V (max) |
| Propagation Delay (Typ) | — | 9 ns |
| Rise Time (Typ) | — | 3 ns |
| Fall Time (Typ) | — | 3 ns |
| Quiescent Current (Typ) | — | 0.6 mA |
| Hanay ng Temperature na Operasyon | — | -40 °C to +125 °C |
| Target Switch Technology | — | GaN HEMT (CoolGaN) or Si MOSFET |