1ED3142MU12FXUMA1 vs 1ED3124MC12HXUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 1ED3142MU12FXUMA1 disebabkan oleh Infineon dan 1ED3124MC12HXUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 1ED3142MU12FXUMA1 1ED3124MC12HXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Product Type Galvanically Isolated Gate Driver IC —
Number of Channels 1 —
Peak Source/Sink Output Current 6.5 A (typical) —
Isolation Technology Coreless Transformer (CT) Magnetic coupling (coreless transformer)
Isolation Voltage (DigiKey rating) 3000 Vrms —
Isolation Voltage (Manufacturer datasheet) 2300 V —
Output Supply Voltage (VCC2-VEE2) [DATA_NEEDED: max value, typical datasheet 25 V max] —
Input Supply Voltage (VCC1) [DATA_NEEDED: value] —
Propagation Delay (typical) 42 ns —
Target Power Switches SiC MOSFETs, IGBTs, MOSFETs —
Kemasan PG-DSO-8-72 (wide-body DSO-8) PG-DSO-8 (DSO-8)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi [DATA_NEEDED: junction/ambient range] —
Protection Features UVLO (output-side), DESAT short-circuit detection —
Output Stage Separate source/sink pins, totem-pole —
Status RoHS Compliant Compliant
Family Infineon EiceDRIVER 1ED31xx —
Channel Type — Single-channel
Configuration — High-side / Low-side (non-inverting)
Number of Drivers — 1
Bilangan Output — 1
Peak Source Current — 13.5 A
Peak Sink Current — 14 A
Isolation Voltage (RMS) — 5.7 kV
Transient Overvoltage — 8000 Vpk
Supply Voltage (VCC2) — 10.5 V to 35 V
Supply Current (Max) — 1.1 mA
Propagation Delay (Typ) — 90 ns
Masa Pertambahan — 15 ns
Masa jatuh — 30 ns
Suhu Operasi — -40 C to +125 C
Protections — UVLO, Short-Circuit (DESAT)
Target Devices — IGBT, SiC MOSFET

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