1ED3142MU12FXUMA1 vs 1ED3124MC12HXUMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng 1ED3142MU12FXUMA1 sa pamamagitan ng Infineon at 1ED3124MC12HXUMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
1ED3142MU12FXUMA1 - 6.5A Isolated Gate Driver SiC/IGBT | Infineon
1ED3142MU12FXUMA1 ✓ NakahandaInfineon
1ED3124MC12HXUMA1 - 14A Isolated Gate Driver, 5.7kV | Infineon
1ED3124MC12HXUMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | 1ED3142MU12FXUMA1 | 1ED3124MC12HXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | Power MOSFET Drivers | Power MOSFET Drivers |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Product Type | Galvanically Isolated Gate Driver IC | — |
| Number of Channels | 1 | — |
| Peak Source/Sink Output Current | 6.5 A (typical) | — |
| Isolation Technology | Coreless Transformer (CT) | Magnetic coupling (coreless transformer) |
| Isolation Voltage (DigiKey rating) | 3000 Vrms | — |
| Isolation Voltage (Manufacturer datasheet) | 2300 V | — |
| Output Supply Voltage (VCC2-VEE2) | [DATA_NEEDED: max value, typical datasheet 25 V max] | — |
| Input Supply Voltage (VCC1) | [DATA_NEEDED: value] | — |
| Propagation Delay (typical) | 42 ns | — |
| Target Power Switches | SiC MOSFETs, IGBTs, MOSFETs | — |
| Packhaging | PG-DSO-8-72 (wide-body DSO-8) | PG-DSO-8 (DSO-8) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | [DATA_NEEDED: junction/ambient range] | — |
| Protection Features | UVLO (output-side), DESAT short-circuit detection | — |
| Output Stage | Separate source/sink pins, totem-pole | — |
| Tindminan RoHS | Compliant | Compliant |
| Family | Infineon EiceDRIVER 1ED31xx | — |
| Channel Type | — | Single-channel |
| Configuration | — | High-side / Low-side (non-inverting) |
| Number of Drivers | — | 1 |
| Bilang ng Outputs | — | 1 |
| Peak Source Current | — | 13.5 A |
| Peak Sink Current | — | 14 A |
| Isolation Voltage (RMS) | — | 5.7 kV |
| Transient Overvoltage | — | 8000 Vpk |
| Supply Voltage (VCC2) | — | 10.5 V to 35 V |
| Supply Current (Max) | — | 1.1 mA |
| Propagation Delay (Typ) | — | 90 ns |
| Oras ng Pagtaas | — | 15 ns |
| Time ng Pagbaba | — | 30 ns |
| Temperature na Operasyon | — | -40 C to +125 C |
| Protections | — | UVLO, Short-Circuit (DESAT) |
| Target Devices | — | IGBT, SiC MOSFET |