1ED3142MU12FXUMA1 vs 1ED3124MC12HXUMA1 比較

詳細並排比較 1ED3142MU12FXUMA1 由 Infineon 與 1ED3124MC12HXUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
1ED3124MC12HXUMA1 1ED3124MC12HXUMA1 - 14A Isolated Gate Driver, 5.7kV | Infineon

1ED3124MC12HXUMA1 - 14A Isolated Gate Driver, 5.7kV | Infineon

1ED3124MC12HXUMA1 ✓ 啟用中

規格比較

參數 1ED3142MU12FXUMA1 1ED3124MC12HXUMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Product Type Galvanically Isolated Gate Driver IC —
Number of Channels 1 —
Peak Source/Sink Output Current 6.5 A (typical) —
Isolation Technology Coreless Transformer (CT) Magnetic coupling (coreless transformer)
Isolation Voltage (DigiKey rating) 3000 Vrms —
Isolation Voltage (Manufacturer datasheet) 2300 V —
Output Supply Voltage (VCC2-VEE2) [DATA_NEEDED: max value, typical datasheet 25 V max] —
Input Supply Voltage (VCC1) [DATA_NEEDED: value] —
Propagation Delay (typical) 42 ns —
Target Power Switches SiC MOSFETs, IGBTs, MOSFETs —
封裝 PG-DSO-8-72 (wide-body DSO-8) PG-DSO-8 (DSO-8)
安裝類型 Surface Mount Surface Mount
工作溫度範圍 [DATA_NEEDED: junction/ambient range] —
Protection Features UVLO (output-side), DESAT short-circuit detection —
Output Stage Separate source/sink pins, totem-pole —
RoHS 狀態 Compliant Compliant
Family Infineon EiceDRIVER 1ED31xx —
Channel Type — Single-channel
Configuration — High-side / Low-side (non-inverting)
Number of Drivers — 1
輸出數量 — 1
Peak Source Current — 13.5 A
Peak Sink Current — 14 A
Isolation Voltage (RMS) — 5.7 kV
Transient Overvoltage — 8000 Vpk
Supply Voltage (VCC2) — 10.5 V to 35 V
Supply Current (Max) — 1.1 mA
Propagation Delay (Typ) — 90 ns
上升時間 — 15 ns
下降時間 — 30 ns
工作溫度 — -40 C to +125 C
Protections — UVLO, Short-Circuit (DESAT)
Target Devices — IGBT, SiC MOSFET

資料表與資源

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