1EDN7136GXTMA1 vs 2EDN7434RXTMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 1EDN7136GXTMA1 disebabkan oleh Infineon dan 2EDN7434RXTMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 1EDN7136GXTMA1 2EDN7434RXTMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Product Type Low-side gate driver IC —
Configuration Single channel, non-inverting —
Peak Source Current 4 A —
Peak Sink Current 8 A —
Target Switch GaN HEMT (CoolGaN) / MOSFET —
Input Logic TTL/CMOS compatible —
UVLO Yes (VDD under-voltage lockout) —
Propagation Delay Sub-nanosecond class —
Kemasan PG-VSON-10-4 (leadless, thermal pad) PG-TSSOP-8 (3.0 x 3.0 mm)
Jenis Pemasangan Surface Mount Surface Mount
Suhu Operasi -40 C to +125 C —
Aras MSL [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL rating]
Status RoHS Compliant Compliant
Lead-free Yes —
Input Voltage (VDD) [DATA_NEEDED: VDD range V] —
Output Voltage (GaN gate) Approximately 6 V (regulated) —
Manufacturer — Infineon Technologies
Part Family — EiceDRIVER 2EDN
Driver Configuration — Dual-channel low-side
Number of Drivers — 2
Peak Output Current — 5 A (source/sink)
Rated Output Current — 4 A
Output Resistance (Low) — [DATA_NEEDED: output resistance Ron low]
Output Resistance (High) — [DATA_NEEDED: output resistance Ron high]
Propagation Delay (Typ.) — 19 ns
Input Logic Compatibility — LV-TTL, non-inverting
Absolute Max Input Voltage — -12 V to +22 V
Supply Voltage Range — [DATA_NEEDED: VDD range]
Gambaran Suhu Operasi — [DATA_NEEDED: operating temperature]
Active Output Voltage Clamping — Yes

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga