2EDR8258XXUMA1 vs 1ED3124MC12HXUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 2EDR8258XXUMA1 disebabkan oleh Infineon dan 1ED3124MC12HXUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 2EDR8258XXUMA1 1ED3124MC12HXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Product Type Isolated single-channel gate driver —
Isolation Technology Magnetic (coreless transformer) coupling Magnetic coupling (coreless transformer)
Number of Channels 1 —
Bilangan Output 2 (high-side and low-side, half-bridge) 1
Peak Source Current 5 A 13.5 A
Peak Sink Current 9 A 14 A
Galvanic Isolation (rms) 5700 Vrms —
Galvanic Isolation (peak) 8000 Vpk —
Common-Mode Transient Immunity (CMTI) 150 V/ns —
Propagation Delay (typical) 38 ns —
Driver Supply Voltage (VCC, VBS) 8 V to 20 V —
Input Supply Voltage (VDD) 3 V to 5.5 V —
Gambaran Suhu Operasi -40 °C to +125 °C —
Kemasan PG-DSO-14 (14-pin) PG-DSO-8 (DSO-8)
Protection Features UVLO (VCC/VBS), DESAT short-circuit, enable/shutdown, dead-time control, interleaving protection —
Logic Input Non-inverting, CMOS compatible —
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS Compliant Compliant
Channel Type — Single-channel
Configuration — High-side / Low-side (non-inverting)
Number of Drivers — 1
Isolation Voltage (RMS) — 5.7 kV
Transient Overvoltage — 8000 Vpk
Supply Voltage (VCC2) — 10.5 V to 35 V
Supply Current (Max) — 1.1 mA
Propagation Delay (Typ) — 90 ns
Masa Pertambahan — 15 ns
Masa jatuh — 30 ns
Suhu Operasi — -40 C to +125 C
Protections — UVLO, Short-Circuit (DESAT)
Target Devices — IGBT, SiC MOSFET

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