2EDR8258XXUMA1 vs 1ED3124MC12HXUMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng 2EDR8258XXUMA1 sa pamamagitan ng Infineon at 1ED3124MC12HXUMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
1ED3124MC12HXUMA1 - 14A Isolated Gate Driver, 5.7kV | Infineon
1ED3124MC12HXUMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | 2EDR8258XXUMA1 | 1ED3124MC12HXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | Power MOSFET Drivers | Power MOSFET Drivers |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Product Type | Isolated single-channel gate driver | — |
| Isolation Technology | Magnetic (coreless transformer) coupling | Magnetic coupling (coreless transformer) |
| Number of Channels | 1 | — |
| Bilang ng Outputs | 2 (high-side and low-side, half-bridge) | 1 |
| Peak Source Current | 5 A | 13.5 A |
| Peak Sink Current | 9 A | 14 A |
| Galvanic Isolation (rms) | 5700 Vrms | — |
| Galvanic Isolation (peak) | 8000 Vpk | — |
| Common-Mode Transient Immunity (CMTI) | 150 V/ns | — |
| Propagation Delay (typical) | 38 ns | — |
| Driver Supply Voltage (VCC, VBS) | 8 V to 20 V | — |
| Input Supply Voltage (VDD) | 3 V to 5.5 V | — |
| Hanay ng Temperature na Operasyon | -40 °C to +125 °C | — |
| Packhaging | PG-DSO-14 (14-pin) | PG-DSO-8 (DSO-8) |
| Protection Features | UVLO (VCC/VBS), DESAT short-circuit, enable/shutdown, dead-time control, interleaving protection | — |
| Logic Input | Non-inverting, CMOS compatible | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Tindminan RoHS | Compliant | Compliant |
| Channel Type | — | Single-channel |
| Configuration | — | High-side / Low-side (non-inverting) |
| Number of Drivers | — | 1 |
| Isolation Voltage (RMS) | — | 5.7 kV |
| Transient Overvoltage | — | 8000 Vpk |
| Supply Voltage (VCC2) | — | 10.5 V to 35 V |
| Supply Current (Max) | — | 1.1 mA |
| Propagation Delay (Typ) | — | 90 ns |
| Oras ng Pagtaas | — | 15 ns |
| Time ng Pagbaba | — | 30 ns |
| Temperature na Operasyon | — | -40 C to +125 C |
| Protections | — | UVLO, Short-Circuit (DESAT) |
| Target Devices | — | IGBT, SiC MOSFET |