AS4C512M16D4-75BIN vs AS4C512M16D4-75BCNTR Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci AS4C512M16D4-75BIN disebabkan oleh Alliance Memory dan AS4C512M16D4-75BCNTR disebabkan oleh Alliance Memory. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Alliance Memory
AS4C512M16D4-75BIN - 8Gbit DDR4 SDRAM 512Mx16 | Alliance Memory
AS4C512M16D4-75BIN ✓ AktifAlliance Memory
AS4C512M16D4-75BCNTR - 8Gb DDR4 SDRAM 2666Mbps | Alliance Memory
AS4C512M16D4-75BCNTR ✓ AktifPengandingan Spesifikasi
| Parametr | AS4C512M16D4-75BIN | AS4C512M16D4-75BCNTR |
|---|---|---|
| Merek | Alliance Memory | Alliance Memory |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | — | $7.90 |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Saiz Ingatan | 8 Gbit | — |
| Memory Organization | 512M x 16 | — |
| Clock Frequency | 1.333 GHz | 1.333 GHz |
| Access Time | 18 ns | 18 ns |
| Write Cycle Time | 15 ns | 15 ns |
| Tegangan Pemberi Arus | 1.2 V | — |
| Kemasan | 96-FBGA (7.5x13) | 96-ball FBGA (7.5 x 13 mm) |
| Suhu Operasi | -40°C to +95°C | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Antaramuka | POD | Parallel |
| Kadar Data | 2666 Mbps | 2666 Mbps per pin |
| Bilangan Pin | 96 | — |
| Status RoHS | Compliant | Compliant |
| Ciri-ciri | Auto self-refresh, auto precharge, asynchronous reset, output enable, CRC, data mask, write leveling, dynamic ODT, ZQ calibration | — |
| Density | — | 8 Gbit |
| Organisasi | — | 512M x 16 |
| Supply Voltage (VDD) | — | 1.2 V (range 1.14 V to 1.26 V) |
| Prefetch Architecture | — | 8n |
| Internal Bank Count | — | 16 banks |
| Gambaran Suhu Operasi | — | 0C to +95C (case, commercial) |
| Process Technology | — | 20nm-class DRAM |
| Termination | — | On-die termination (ODT) |
| Refresh Modes | — | Auto-refresh and self-refresh |
| Packaging Option | — | Tape & Reel (TR suffix) |
| Lead-Free | — | Yes |