BSC022N04LS6ATMA1 vs BSC084P03NS3GATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC022N04LS6ATMA1 disebabkan oleh Infineon dan BSC084P03NS3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
BSC084P03NS3GATMA1 - P-Ch 30V 78.6A OptiMOS P3 MOSFET | Infineon
BSC084P03NS3GATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | BSC022N04LS6ATMA1 | BSC084P03NS3GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Technology | OptiMOS™ 6 (N-channel trench) | — |
| Drain-Source Voltage (VDS) | 40 V | -30 V |
| Continuous Drain Current (ID) at Ta | 27 A | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| Maximum Pulsed Drain Current (IDM) | 139 A | — |
| On-Resistance RDS(on) max | 2.2 mOhm at VGS=10 V | — |
| Power Dissipation (Ta) | 3 W | 2.5 W |
| Power Dissipation (Tc) | 79 W | 69 W |
| Kemasan | SuperSO8 5x6 (PG-TDSON-8-1) | PG-TDSON-8-5 (SuperSO8 5x6) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Channel Type | N-Channel | — |
| Kiraan Pin | 8 | — |
| Suhu Operasi | -55 C to +175 C (junction) | — |
| Status RoHS | Compliant | Compliant |
| Polarity / Channel Type | — | P-Channel |
| Continuous Drain Current (Ta) | — | 14.9 A |
| Continuous Drain Current (Tc) | — | 78.6 A |
| Rds(on) max @ VGS = -10 V | — | 6.1 mOhm |
| Rds(on) max @ VGS = -2.5 V | — | [DATA_NEEDED: Rds(on) at 2.5V] |
| Gate Threshold Voltage (VGS(th) typ) | — | -1.7 V |
| Total Gate Charge (Qg) | — | 58 nC @ VGS = -10 V |
| Input Capacitance (Ciss) | — | 3.19 nF |
| Output Capacitance (Coss) | — | 110 pF |
| Reverse Transfer Capacitance (Crss) | — | 1.52 nF |
| Gambaran Suhu Operasi | — | -55C to +150C |
| Technology Family | — | OptiMOS P3 |
| Aras MSL | — | 1 (unlimited) |