BSC022N04LS6ATMA1 vs BSC084P03NS3GATMA1 比較
詳細並排比較 BSC022N04LS6ATMA1 由 Infineon 與 BSC084P03NS3GATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSC022N04LS6ATMA1 | BSC084P03NS3GATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Technology | OptiMOS™ 6 (N-channel trench) | — |
| Drain-Source Voltage (VDS) | 40 V | -30 V |
| Continuous Drain Current (ID) at Ta | 27 A | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| Maximum Pulsed Drain Current (IDM) | 139 A | — |
| On-Resistance RDS(on) max | 2.2 mOhm at VGS=10 V | — |
| Power Dissipation (Ta) | 3 W | 2.5 W |
| Power Dissipation (Tc) | 79 W | 69 W |
| 封裝 | SuperSO8 5x6 (PG-TDSON-8-1) | PG-TDSON-8-5 (SuperSO8 5x6) |
| 安裝類型 | Surface Mount | Surface Mount |
| Channel Type | N-Channel | — |
| 腳位數 | 8 | — |
| 工作溫度 | -55 C to +175 C (junction) | — |
| RoHS 狀態 | Compliant | Compliant |
| Polarity / Channel Type | — | P-Channel |
| Continuous Drain Current (Ta) | — | 14.9 A |
| Continuous Drain Current (Tc) | — | 78.6 A |
| Rds(on) max @ VGS = -10 V | — | 6.1 mOhm |
| Rds(on) max @ VGS = -2.5 V | — | [DATA_NEEDED: Rds(on) at 2.5V] |
| Gate Threshold Voltage (VGS(th) typ) | — | -1.7 V |
| Total Gate Charge (Qg) | — | 58 nC @ VGS = -10 V |
| Input Capacitance (Ciss) | — | 3.19 nF |
| Output Capacitance (Coss) | — | 110 pF |
| Reverse Transfer Capacitance (Crss) | — | 1.52 nF |
| 工作溫度範圍 | — | -55C to +150C |
| Technology Family | — | OptiMOS P3 |
| MSL 等級 | — | 1 (unlimited) |