BSC093N15NS5 vs BSC093N15NS5ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC093N15NS5 disebabkan oleh Infineon dan BSC093N15NS5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSC093N15NS5 | BSC093N15NS5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC093N15NS5 | — |
| Technology | OptiMOS™ 5 | OptiMOS 5 150V |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID) at Tc | 87 A | — |
| On-Resistance RDS(on) max at VGS=10V | 9.3 mOhm | — |
| Power Dissipation (Tc) | 139 W | — |
| Kemasan | PG-TDSON-8-7 (SuperSO8 5x6) | SuperSO8 5x6 (PG-TDSON-8-7) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | -55C to +150C | [DATA_NEEDED: operating temperature range] |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical value] | [DATA_NEEDED: total gate charge Qg] |
| Status RoHS | Compliant | Compliant |
| AEC-Q100 Automotive Qualified | Not qualified (standard grade) | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) Max | — | 150 V |
| Continuous Drain Current (ID) at TC | — | 87 A |
| Drain-Source On-Resistance (RDS(on)) Max at VGS=10V | — | 9.3 mΩ |
| Power Dissipation (PD) at TC | — | 139 W |
| Gate Drive Voltage (VGS) Recommended | — | 10 V |
| Aras MSL | — | [DATA_NEEDED: MSL level] |
| Boson Bebas | — | [DATA_NEEDED: halogen free status] |