BSC097N06NSATMA1 vs IPL60R105P7AUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC097N06NSATMA1 disebabkan oleh Infineon dan IPL60R105P7AUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC097N06NSATMA1 IPL60R105P7AUMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 CoolMOS P7
Part Status Active —
FET Type N-Channel —
Drain-to-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at Tc=25C 46 A —
Continuous Drain Current (ID) at Ta=25C [DATA_NEEDED: ID at Ta=25C PCB-mounted] —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM peak value] [DATA_NEEDED: pulsed drain current]
RDS(on) max at VGS=10 V 9.7 mOhm —
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical value] —
Gate Charge (Qg typ) [DATA_NEEDED: total gate charge Qg] —
Power Dissipation at Ta=25C 2.5 W —
Power Dissipation at Tc=25C 36 W —
Suhu Hubungan Operasi -55C to +150C —
Kemasan / Case PG-TDSON-8-6 (SuperSO8 5x6 mm) —
Jenis Pemasangan Surface Mount Surface Mount
Technology OptiMOS 5 (Trench) Superjunction (SJ) N-Channel Power MOSFET
Status RoHS Compliant Compliant
Aras MSL 1 (Unlimited) [DATA_NEEDED: MSL rating]
Avalanche Rated Yes (EAS per datasheet) —
Drain-Source Voltage (VDS) — 600 V
On-Resistance (RDS(on)) max — 105 mΩ
Continuous Drain Current (ID) at Tc — 33 A
Power Dissipation (Ptot) at Tc — 137 W
Gate Threshold Voltage (VGS(th)) typ — 3.5 V
Gate Charge (Qg) typ — 45 nC
Gambaran Suhu Operasi — -55C to +150C
Kemasan — PG-VSON-4 (4-pin SMD with exposed pad)
Channel Type — N-Channel
Boson Bebas — Yes
Lead-Free — Yes

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