BSC155N06NDATMA1 vs BSC027N10NS5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC155N06NDATMA1 disebabkan oleh Infineon dan BSC027N10NS5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC155N06NDATMA1 BSC027N10NS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif NRND
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC155N06NDATMA1 BSC027N10NS5ATMA1
Technology OptiMOS 3 (N-channel trench) OptiMOS 5 (100V)
Configuration Dual N-channel MOSFET array —
Drain-to-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at Tc=25C 20 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] 194 A
On-State Resistance RDS(on) max at VGS=10V 15.5 mOhm —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Gambaran Suhu Operasi -55 C to +175 C [DATA_NEEDED: Tj min/max]
Kemasan PG-TDSON-8-4 (SuperSO8 5x6 mm) PG-TSON-8-3 (SuperSO8 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Power Dissipation (Tc=25C) 50 W —
Aras MSL 1 [DATA_NEEDED: MSL rating]
Status RoHS Compliant (Pb-free plating) Compliant
Lead-Free Plating Yes —
Shoot-Through Immunity Qgd/Qgs < 0.8 —
Channel Type — N-Channel
Drain-Source Voltage (VDS) — 100 V
Gate-Source Voltage (VGS) Max — [DATA_NEEDED: VGS max rating]
Continuous Drain Current (ID) at Ta — 23 A
Continuous Drain Current (ID) at Tc — 100 A
On-Resistance RDS(on) Max at VGS=10V — 2.7 mOhm
Power Dissipation (Ta) — 3 W
Power Dissipation (Tc) — 214 W
Qualification — Industrial (AEC-Q101 variant BSC027N10NS5 exists separately)

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