BSC190N15NS3GATMA1 vs BSC190N15NS3G Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC190N15NS3GATMA1 disebabkan oleh Infineon dan BSC190N15NS3G disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC190N15NS3GATMA1 BSC190N15NS3G
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS 3 (N-Channel) OptiMOS 3 (trench-gate)
Drain-Source Voltage (VDS) 150 V —
Continuous Drain Current (ID) at Tc=25C 50 A —
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (VGS) max 20 V —
Gate Threshold Voltage (VGS(th)) 2.5 V to 3.5 V —
On-Resistance RDS(on) max at VGS=10V 19 mOhm —
On-Resistance RDS(on) typ at VGS=10V [DATA_NEEDED: RDS(on) typical at 10V] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Power Dissipation (PD) at Tc=25C 125 W —
Gambaran Suhu Operasi -55 C to +150 C —
Kemasan PG-TDSON-8-1 (TDSON-8 EP) SuperSO8 5x6 / PG-TDSON-8-1
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS Compliant —
Aras MSL 1 —
FET Type — N-Channel
Manufacturer — Infineon Technologies
Drain-Source Voltage (V_DS max) — 150 V
Continuous Drain Current (I_D, Tc) — 50 A
Pulsed Drain Current (I_DM) — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (V_GS max) — +/-20 V
Gate Threshold Voltage (V_GS(th) typ) — [DATA_NEEDED: gate threshold voltage]
Static Drain-Source R_DS(on) max @ 10 V — 19 mOhm
Static Drain-Source R_DS(on) typ @ 10 V — [DATA_NEEDED: typical R_DS(on) at 10 V]
Total Power Dissipation (P_D, Tc=25C) — 125 W
Suhu Hubungan Operasi — -55C to +150C
Lead-Free / RoHS — Yes (per Infineon product page)
MSL (Moisture Sensitivity Level) — [DATA_NEEDED: MSL rating]
Kiraan Pin — 8

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