BSC190N15NS3GATMA1 vs BSC190N15NS3G 比較
詳細並排比較 BSC190N15NS3GATMA1 由 Infineon 與 BSC190N15NS3G 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
BSC190N15NS3GATMA1 - 150V 50A N-Channel OptiMOS 3 MOSFET | Infineon
BSC190N15NS3GATMA1 ✓ 啟用中規格比較
| 參數 | BSC190N15NS3GATMA1 | BSC190N15NS3G |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Technology | OptiMOS 3 (N-Channel) | OptiMOS 3 (trench-gate) |
| Drain-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID) at Tc=25C | 50 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | 20 V | — |
| Gate Threshold Voltage (VGS(th)) | 2.5 V to 3.5 V | — |
| On-Resistance RDS(on) max at VGS=10V | 19 mOhm | — |
| On-Resistance RDS(on) typ at VGS=10V | [DATA_NEEDED: RDS(on) typical at 10V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (PD) at Tc=25C | 125 W | — |
| 工作溫度範圍 | -55 C to +150 C | — |
| 封裝 | PG-TDSON-8-1 (TDSON-8 EP) | SuperSO8 5x6 / PG-TDSON-8-1 |
| 安裝類型 | Surface Mount | Surface Mount |
| RoHS 狀態 | Compliant | — |
| MSL 等級 | 1 | — |
| FET Type | — | N-Channel |
| Manufacturer | — | Infineon Technologies |
| Drain-Source Voltage (V_DS max) | — | 150 V |
| Continuous Drain Current (I_D, Tc) | — | 50 A |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (V_GS max) | — | +/-20 V |
| Gate Threshold Voltage (V_GS(th) typ) | — | [DATA_NEEDED: gate threshold voltage] |
| Static Drain-Source R_DS(on) max @ 10 V | — | 19 mOhm |
| Static Drain-Source R_DS(on) typ @ 10 V | — | [DATA_NEEDED: typical R_DS(on) at 10 V] |
| Total Power Dissipation (P_D, Tc=25C) | — | 125 W |
| 工作接面溫度 | — | -55C to +150C |
| Lead-Free / RoHS | — | Yes (per Infineon product page) |
| MSL (Moisture Sensitivity Level) | — | [DATA_NEEDED: MSL rating] |
| 腳位數 | — | 8 |