BSD235CH6327XTSA1 vs BSC094N06LS5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSD235CH6327XTSA1 disebabkan oleh Infineon dan BSC094N06LS5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSD235CH6327XTSA1 BSC094N06LS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS™ —
Configuration N+P complementary dual MOSFET —
Drain-to-Source Voltage (VDS) 20 V 60 V
N-Channel Continuous Drain Current (ID) 950 mA —
P-Channel Continuous Drain Current (ID) 530 mA (negative polarity) —
Total Power Dissipation (Ptot) 500 mW —
Package Type PG-SOT363-6-1 (SOT-363, 6-pin) —
Jenis Pemasangan Surface Mount Surface Mount
Technology OptiMOS™ low-voltage OptiMOS™ 5 (logic-level)
Gambaran Suhu Operasi -55 °C to +150 °C (junction) —
Polarity N-channel + P-channel —
Channel Mode Enhancement —
Status RoHS Compliant (lead-free) Compliant
Aras MSL 1 [DATA_NEEDED: MSL level]
Kiraan Pin 6 —
Part Number — BSC094N06LS5ATMA1
FET Type — N-Channel
Continuous Drain Current (ID) at TC=25°C — 47 A
Continuous Drain Current (ID) at TC=100°C — [DATA_NEEDED: ID at TC=100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
RDS(on) max at VGS=10 V — 9.4 mΩ
RDS(on) max at VGS=4.5 V — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ/range]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typ]
Power Dissipation (PD) at TC=25°C — 36 W
Suhu Hubungan Operasi — -55 °C to +150 °C
Kemasan — PG-TDSON-8-6 (SuperSO8 5x6)

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