BSD235CH6327XTSA1 vs BSC094N06LS5ATMA1 Comparison

Detailed side-by-side comparison of BSD235CH6327XTSA1 by Infineon and BSC094N06LS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSD235CH6327XTSA1 BSC094N06LS5ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS™ —
Configuration N+P complementary dual MOSFET —
Drain-to-Source Voltage (VDS) 20 V 60 V
N-Channel Continuous Drain Current (ID) 950 mA —
P-Channel Continuous Drain Current (ID) 530 mA (negative polarity) —
Total Power Dissipation (Ptot) 500 mW —
Package Type PG-SOT363-6-1 (SOT-363, 6-pin) —
Mounting Type Surface Mount Surface Mount
Technology OptiMOS™ low-voltage OptiMOS™ 5 (logic-level)
Operating Temperature Range -55 °C to +150 °C (junction) —
Polarity N-channel + P-channel —
Channel Mode Enhancement —
RoHS Status Compliant (lead-free) Compliant
MSL Level 1 [DATA_NEEDED: MSL level]
Pin Count 6 —
Part Number — BSC094N06LS5ATMA1
FET Type — N-Channel
Continuous Drain Current (ID) at TC=25°C — 47 A
Continuous Drain Current (ID) at TC=100°C — [DATA_NEEDED: ID at TC=100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
RDS(on) max at VGS=10 V — 9.4 mΩ
RDS(on) max at VGS=4.5 V — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ/range]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typ]
Power Dissipation (PD) at TC=25°C — 36 W
Operating Junction Temperature — -55 °C to +150 °C
Package — PG-TDSON-8-6 (SuperSO8 5x6)

Datasheets & Resources

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