BSD235CH6327XTSA1 vs BSC094N06LS5ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSD235CH6327XTSA1 sa pamamagitan ng Infineon at BSC094N06LS5ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSD235CH6327XTSA1 - 20V Complementary N+P MOSFET | Infineon OptiMOS™
BSD235CH6327XTSA1 ✓ NakahandaInfineon
BSC094N06LS5ATMA1 - 60V 9.4mΩ 47A N-Channel OptiMOS 5 | Infineon
BSC094N06LS5ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSD235CH6327XTSA1 | BSC094N06LS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS™ | — |
| Configuration | N+P complementary dual MOSFET | — |
| Drain-to-Source Voltage (VDS) | 20 V | 60 V |
| N-Channel Continuous Drain Current (ID) | 950 mA | — |
| P-Channel Continuous Drain Current (ID) | 530 mA (negative polarity) | — |
| Total Power Dissipation (Ptot) | 500 mW | — |
| Package Type | PG-SOT363-6-1 (SOT-363, 6-pin) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | OptiMOS™ low-voltage | OptiMOS™ 5 (logic-level) |
| Hanay ng Temperature na Operasyon | -55 °C to +150 °C (junction) | — |
| Polarity | N-channel + P-channel | — |
| Channel Mode | Enhancement | — |
| Tindminan RoHS | Compliant (lead-free) | Compliant |
| Level ng MSL | 1 | [DATA_NEEDED: MSL level] |
| Bilang ng Pin | 6 | — |
| Part Number | — | BSC094N06LS5ATMA1 |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TC=25°C | — | 47 A |
| Continuous Drain Current (ID) at TC=100°C | — | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| RDS(on) max at VGS=10 V | — | 9.4 mΩ |
| RDS(on) max at VGS=4.5 V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/range] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typ] |
| Power Dissipation (PD) at TC=25°C | — | 36 W |
| Temperature ng Junction na Operasyon | — | -55 °C to +150 °C |
| Packhaging | — | PG-TDSON-8-6 (SuperSO8 5x6) |