BSF134N10NJ3GXUMA1 vs IPD068N10N3GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSF134N10NJ3GXUMA1 disebabkan oleh Infineon dan IPD068N10N3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSF134N10NJ3GXUMA1 IPD068N10N3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 100 V —
FET Type N-Channel —
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) at TA=25°C 9 A —
Continuous Drain Current (ID) at TC=25°C 40 A —
Power Dissipation (PD) at TA=25°C 2.2 W —
Power Dissipation (PD) at TC=25°C 43 W —
Kemasan MG-WDSON-2 (CanPAK M) PG-TO252-3 (DPAK, 2 leads + tab)
Jenis Pemasangan Surface Mount Surface Mount
Configuration Single with built-in diode Single
Terminal Position Bottom —
Terminal Finish Silver Nickel —
Gambaran Suhu Operasi -55°C to +150°C (TJ max) [DATA_NEEDED: exact Min/Max from datasheet] —
Status RoHS Compliant Compliant
Aras MSL [DATA_NEEDED: MSL rating] 1
Technology Trench-gate OptiMOS planar OptiMOS 3 (N-Channel, Enhancement Mode)
Gate Charge (Qg) [DATA_NEEDED: Qg value] —
RDS(on) at VGS=10V [DATA_NEEDED: RDS(on) max value] —
Body Diode Reverse Recovery [DATA_NEEDED: trr value] —
Part Number — IPD068N10N3GATMA1
Continuous Drain Current (ID) at Tc — 90 A
On-Resistance RDS(on) max — 6.8 mOhm
Power Dissipation (PD) at Tc — 150 W
Gate Threshold Voltage VGS(th) — 2.0 V to 4.0 V (typical)
Suhu Hubungan Operasi — -55 C to +175 C
Channel Type — N-Channel
Packing — Tape & Reel (T/R)
Qualification — Industrial (non-automotive)

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