BSF134N10NJ3GXUMA1 vs IPD068N10N3GATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSF134N10NJ3GXUMA1 sa pamamagitan ng Infineon at IPD068N10N3GATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSF134N10NJ3GXUMA1 - 100V OptiMOS N-Ch MOSFET, 9A/40A | Infineon
BSF134N10NJ3GXUMA1 ✓ NakahandaInfineon
IPD068N10N3GATMA1 - 100V 90A OptiMOS 3 N-Channel MOSFET | Infineon
IPD068N10N3GATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSF134N10NJ3GXUMA1 | IPD068N10N3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 100 V | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at TA=25°C | 9 A | — |
| Continuous Drain Current (ID) at TC=25°C | 40 A | — |
| Power Dissipation (PD) at TA=25°C | 2.2 W | — |
| Power Dissipation (PD) at TC=25°C | 43 W | — |
| Packhaging | MG-WDSON-2 (CanPAK M) | PG-TO252-3 (DPAK, 2 leads + tab) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Configuration | Single with built-in diode | Single |
| Terminal Position | Bottom | — |
| Terminal Finish | Silver Nickel | — |
| Hanay ng Temperature na Operasyon | -55°C to +150°C (TJ max) [DATA_NEEDED: exact Min/Max from datasheet] | — |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | [DATA_NEEDED: MSL rating] | 1 |
| Technology | Trench-gate OptiMOS planar | OptiMOS 3 (N-Channel, Enhancement Mode) |
| Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| RDS(on) at VGS=10V | [DATA_NEEDED: RDS(on) max value] | — |
| Body Diode Reverse Recovery | [DATA_NEEDED: trr value] | — |
| Part Number | — | IPD068N10N3GATMA1 |
| Continuous Drain Current (ID) at Tc | — | 90 A |
| On-Resistance RDS(on) max | — | 6.8 mOhm |
| Power Dissipation (PD) at Tc | — | 150 W |
| Gate Threshold Voltage VGS(th) | — | 2.0 V to 4.0 V (typical) |
| Temperature ng Junction na Operasyon | — | -55 C to +175 C |
| Channel Type | — | N-Channel |
| Packing | — | Tape & Reel (T/R) |
| Qualification | — | Industrial (non-automotive) |