BSP315PH6327XTSA1 vs BSP88H6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSP315PH6327XTSA1 disebabkan oleh Infineon dan BSP88H6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSP315PH6327XTSA1 BSP315PH6327XTSA1 - 60V P-Ch OptiMOS MOSFET | Infineon

BSP315PH6327XTSA1 - 60V P-Ch OptiMOS MOSFET | Infineon

BSP315PH6327XTSA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSP315PH6327XTSA1 BSP88H6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type P-Channel —
Technology OptiMOS (enhancement mode) SIPMOS (planar enhancement mode)
Drain-Source Voltage (VDS) -60 V 240 V
Continuous Drain Current (ID) -1.17 A (Ta) 350 mA at Ta=25 C
Power Dissipation (PD) 1.8 W (Ta) 1.8 W at Ta=25 C
Gate-Source Voltage (VGS) ±20 V (max) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max] [DATA_NEEDED: VGS(th) min/typ/max]
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS=-10 V] 6 ohm typical at VGS=10 V
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] [DATA_NEEDED: total gate charge]
Gambaran Suhu Operasi -55 C to +150 C (junction) —
Kemasan PG-SOT223-4 (SOT-223-3 pinout with exposed tab) PG-SOT223-4 (SOT-223-3)
Jenis Pemasangan Surface Mount Surface Mount
Avalanche Energy Rated Yes (per datasheet) —
Lead-Free / RoHS Yes / Compliant —
Aras MSL 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL level]
Jenis Transistor — N-Channel MOSFET
Configuration — Single
Suhu Operasi — -55 C to +150 C
Automotive Qualification — AEC-Q101 qualified
Lead Plating — Pb-free
RoHS Compliance — Compliant
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Drain Tab Connection — SOT-223 tab is drain

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