BSP315PH6327XTSA1 vs BSR802NL6327HTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSP315PH6327XTSA1 disebabkan oleh Infineon dan BSR802NL6327HTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSP315PH6327XTSA1 BSP315PH6327XTSA1 - 60V P-Ch OptiMOS MOSFET | Infineon

BSP315PH6327XTSA1 - 60V P-Ch OptiMOS MOSFET | Infineon

BSP315PH6327XTSA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSP315PH6327XTSA1 BSR802NL6327HTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type P-Channel —
Technology OptiMOS (enhancement mode) OptiMOS 2 (N-Channel Trench MOSFET)
Drain-Source Voltage (VDS) -60 V —
Continuous Drain Current (ID) -1.17 A (Ta) —
Power Dissipation (PD) 1.8 W (Ta) —
Gate-Source Voltage (VGS) ±20 V (max) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max] [DATA_NEEDED: VGS(th) typical value]
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS=-10 V] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
Gambaran Suhu Operasi -55 C to +150 C (junction) —
Kemasan PG-SOT223-4 (SOT-223-3 pinout with exposed tab) PG-SC59-3 (SC-59 / SOT-346)
Jenis Pemasangan Surface Mount Surface Mount
Avalanche Energy Rated Yes (per datasheet) —
Lead-Free / RoHS Yes / Compliant —
Aras MSL 1 (per JEDEC J-STD-020) —
Manufacturer — Infineon Technologies
Part Number — BSR802NL6327HTSA1
Channel Type — N-Channel
Drain-Source Voltage (VDS) max — 20 V
Continuous Drain Current (ID) max — 3.7 A (Ta=25C)
Power Dissipation (PD) max — 500 mW (Ta=25C)
On-Resistance (RDS(on)) typ — 23 mOhm @ VGS=4.5 V
Suhu Hubungan Operasi — -55C to +150C
Qualification — Automotive
Status RoHS — Compliant
Kiraan Pin — 3

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