BSP315PH6327XTSA1 vs BSR802NL6327HTSA1 比較

詳細並排比較 BSP315PH6327XTSA1 由 Infineon 與 BSR802NL6327HTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSP315PH6327XTSA1 BSP315PH6327XTSA1 - 60V P-Ch OptiMOS MOSFET | Infineon

BSP315PH6327XTSA1 - 60V P-Ch OptiMOS MOSFET | Infineon

BSP315PH6327XTSA1 ✓ 啟用中
Infineon
BSR802NL6327HTSA1 BSR802NL6327HTSA1 - 20V N-Ch 3.7A OptiMOS 2 MOSFET | Infineon

BSR802NL6327HTSA1 - 20V N-Ch 3.7A OptiMOS 2 MOSFET | Infineon

BSR802NL6327HTSA1 ✓ 啟用中

規格比較

參數 BSP315PH6327XTSA1 BSR802NL6327HTSA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type P-Channel —
Technology OptiMOS (enhancement mode) OptiMOS 2 (N-Channel Trench MOSFET)
Drain-Source Voltage (VDS) -60 V —
Continuous Drain Current (ID) -1.17 A (Ta) —
Power Dissipation (PD) 1.8 W (Ta) —
Gate-Source Voltage (VGS) ±20 V (max) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max] [DATA_NEEDED: VGS(th) typical value]
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS=-10 V] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
工作溫度範圍 -55 C to +150 C (junction) —
封裝 PG-SOT223-4 (SOT-223-3 pinout with exposed tab) PG-SC59-3 (SC-59 / SOT-346)
安裝類型 Surface Mount Surface Mount
Avalanche Energy Rated Yes (per datasheet) —
Lead-Free / RoHS Yes / Compliant —
MSL 等級 1 (per JEDEC J-STD-020) —
Manufacturer — Infineon Technologies
Part Number — BSR802NL6327HTSA1
Channel Type — N-Channel
Drain-Source Voltage (VDS) max — 20 V
Continuous Drain Current (ID) max — 3.7 A (Ta=25C)
Power Dissipation (PD) max — 500 mW (Ta=25C)
On-Resistance (RDS(on)) typ — 23 mOhm @ VGS=4.5 V
工作接面溫度 — -55C to +150C
Qualification — Automotive
RoHS 狀態 — Compliant
腳位數 — 3

資料表與資源

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