BSS126H6327XTSA2 vs BSS84PH6327XTSA2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSS126H6327XTSA2 disebabkan oleh Infineon dan BSS84PH6327XTSA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSS126H6327XTSA2 BSS84PH6327XTSA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel Depletion Mode P-Channel
Drain-Source Voltage (VDS) Max 600 V —
Continuous Drain Current (ID) at Ta 21 mA —
Power Dissipation (PD) at Ta 500 mW —
On-Resistance (RDS(on)) Max 500 ohm (typical for depletion-mode) —
Gate-Source Voltage (VGS) Range [DATA_NEEDED: VGS max/min] —
Technology SIPMOS (DMOS) —
Kemasan SOT-23-3 (PG-SOT23) PG-SOT23 (SOT-23-3)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55C to +150C (junction, typical) —
Kiraan Pin 3 —
Configuration Single —
Channel Mode Depletion (normally-on at VGS = 0) —
Aras MSL 1 (per JEDEC J-STD-020) —
Status RoHS Compliant Compliant
Lead-Free Yes Yes
Boson Bebas Yes (Infineon 'green' package) —
Manufacturer — Infineon Technologies
Part Number — BSS84PH6327XTSA2
Drain-to-Source Voltage (VDS) — -60 V
Continuous Drain Current (ID) — -170 mA (Ta)
Power Dissipation (PD) — 360 mW (Ta)
On-State Resistance (RDS(on)) max — 8 ohm at VGS = -10 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical and min/max values]
Gate-to-Source Voltage (VGS) — +/-20 V
Suhu Operasi — -55C to +150C
Qualification — AEC-Q101 (Automotive)
Technology Family — SIPMOS OptiMOS
Polarity — P-Channel Enhancement Mode

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