BSS126H6327XTSA2 vs BSS84PH6327XTSA2 比較

詳細並排比較 BSS126H6327XTSA2 由 Infineon 與 BSS84PH6327XTSA2 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSS126H6327XTSA2 BSS126H6327XTSA2 - 600V N-Ch Depletion MOSFET SOT-23 | Infineon

BSS126H6327XTSA2 - 600V N-Ch Depletion MOSFET SOT-23 | Infineon

BSS126H6327XTSA2 ✓ 啟用中
Infineon
BSS84PH6327XTSA2 BSS84PH6327XTSA2 - -60V P-Ch MOSFET 170mA SOT-23 | Infineon

BSS84PH6327XTSA2 - -60V P-Ch MOSFET 170mA SOT-23 | Infineon

BSS84PH6327XTSA2 ✓ 啟用中

規格比較

參數 BSS126H6327XTSA2 BSS84PH6327XTSA2
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel Depletion Mode P-Channel
Drain-Source Voltage (VDS) Max 600 V —
Continuous Drain Current (ID) at Ta 21 mA —
Power Dissipation (PD) at Ta 500 mW —
On-Resistance (RDS(on)) Max 500 ohm (typical for depletion-mode) —
Gate-Source Voltage (VGS) Range [DATA_NEEDED: VGS max/min] —
Technology SIPMOS (DMOS) —
封裝 SOT-23-3 (PG-SOT23) PG-SOT23 (SOT-23-3)
安裝類型 Surface Mount Surface Mount
工作溫度範圍 -55C to +150C (junction, typical) —
腳位數 3 —
Configuration Single —
Channel Mode Depletion (normally-on at VGS = 0) —
MSL 等級 1 (per JEDEC J-STD-020) —
RoHS 狀態 Compliant Compliant
Lead-Free Yes Yes
無鹵素 Yes (Infineon 'green' package) —
Manufacturer — Infineon Technologies
Part Number — BSS84PH6327XTSA2
Drain-to-Source Voltage (VDS) — -60 V
Continuous Drain Current (ID) — -170 mA (Ta)
Power Dissipation (PD) — 360 mW (Ta)
On-State Resistance (RDS(on)) max — 8 ohm at VGS = -10 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical and min/max values]
Gate-to-Source Voltage (VGS) — +/-20 V
工作溫度 — -55C to +150C
Qualification — AEC-Q101 (Automotive)
Technology Family — SIPMOS OptiMOS
Polarity — P-Channel Enhancement Mode

資料表與資源

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