BSS127H6327XTSA2 vs BSO613SPVGXUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSS127H6327XTSA2 disebabkan oleh Infineon dan BSO613SPVGXUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSS127H6327XTSA2 BSO613SPVGXUMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel SIPMOS, enhancement mode P-Channel
Drain-Source Voltage (VDS) 600 V -60 V
Continuous Drain Current (ID) 21 mA (Ta) —
Pulsed Drain Current (ID,pulse) [DATA_NEEDED: pulsed ID limit] —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] [DATA_NEEDED: VGS max +/-V]
Gate Threshold Voltage (VGS(th)) 4.5 V (logic level, rated) [DATA_NEEDED: VGS(th) typical and min/max values]
On-State Resistance (RDS(on)) max 500 ohm at ID = 21 mA —
Total Power Dissipation (Ptot) 500 mW (Ta) —
Suhu Hubungan Operasi -55 C to +150 C —
Kemasan SOT-23-3 (PG-SOT23) PG-DSO-8-6 (Power-SO-8)
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 3 8 (6 active, 2 thermal/NC)
dv/dt Rated Yes —
Automotive Qualification AEC-Q101 —
Status RoHS Compliant (lead-free) Compliant
Boson Bebas Yes, per IEC 61249-2-21 —
Aras MSL [DATA_NEEDED: MSL rating] MSL3 (per JEDEC J-STD-020, industry standard for Power-SO-8)
Continuous Drain Current (ID) at TA=25C — -3.44 A
Power Dissipation (PD) at TA=25C — 2.5 W
Technology — OptiMOS (Trench)
RDS(on) at VGS=10V — [DATA_NEEDED: RDS(on) max at VGS=10V]
RDS(on) at VGS=4.5V — [DATA_NEEDED: RDS(on) max at VGS=4.5V]
Gambaran Suhu Operasi — -55C to +150C (junction, per industry standard for Power-SO-8 MOSFETs)
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM pulsed value]
Lead-Free — Yes
Avalanche Rated — Yes (per Infineon OptiMOS family)

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga