BSS308PEH6327XTSA1 vs BSS119NH6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSS308PEH6327XTSA1 disebabkan oleh Infineon dan BSS119NH6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSS308PEH6327XTSA1 BSS119NH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Family OptiMOS P (small signal / small power MOSFET) —
Jenis Transistor P-Channel Enhancement Mode MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) -30 V —
Continuous Drain Current (ID) -2 A (Ta) —
RDS(on) Max 80 mΩ at VGS = -10 V —
Gate-Source Voltage (VGS) Max +/-20 V —
Power Dissipation (PD) 500 mW (Ta) —
Gambaran Suhu Operasi -55 °C to +150 °C -55°C to +150°C (TJ) [DATA_NEEDED: TA range from datasheet]
Kemasan / Case PG-SOT23 (SOT-23-3) —
Jenis Pemasangan Surface Mount Surface Mount
Bilangan Pin 3 —
Qualification AEC-Q101 Automotive AEC-Q101 (automotive grade)
Status RoHS Compliant Compliant
Packaging Tape & Reel (T/R) Tape & Reel (3,000 pcs/reel)
Standard Reel Quantity 3000 pcs —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] 0.8 V to 1.8 V (typical) [DATA_NEEDED: exact min/typ/max]
FET Technology — Enhancement-mode, planar N-channel
Drain-Source Voltage (VDS) max — 100 V
Continuous Drain Current (ID) at TA=25°C — 190 mA
Power Dissipation (PD) at TA=25°C — 500 mW
Drain-Source On-Resistance (RDS(on)) max — 6 Ω (typical) [DATA_NEEDED: exact VGS condition and max value]
Gate Drive Voltage (VGS) — ±20 V max
Kemasan — PG-SOT23 (SOT-23-3)
Lead-Free — Yes
Aras MSL — 1 [DATA_NEEDED: confirm from datasheet]

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