CY14V104LA-BA45XIT vs CY14V104LA Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci CY14V104LA-BA45XIT disebabkan oleh Infineon dan CY14V104LA disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr CY14V104LA-BA45XIT CY14V104LA
Merek Infineon Infineon
Kategori EEPROM Memory ICs
Status Lingkungan Hidup Aktif Aktif
Jenis Ingatan nvSRAM (Non-Volatile SRAM) Non-Volatile SRAM (nvSRAM)
Saiz Ingatan 4 Mbit —
Organisasi 512K x 8 —
Antaramuka Parallel Parallel (asynchronous SRAM-compatible)
Access Time 45 ns 25 ns (BA25) or 45 ns (BA45)
Supply Voltage Range 3 V (min VCC 2.7 V typical class, max 3.6 V) —
Max Operating Voltage 3.6 V —
Jenis Pemasangan Surface Mount Surface Mount
Kemasan 48-FBGA (6 x 10 mm, 1.20 mm height) 48-FBGA (6 x 10 x 1.20 mm)
Suhu Operasi -40C to +85C -40 C to +85 C (industrial)
Read/Write Endurance Unlimited (SRAM mode) Unlimited (SRAM side)
Automotive Qualified No (industrial grade) —
Memory Category NVRAM, NVSRAM, SRAM Chip —
Density 4096 kbits 4 Mbit (512 K x 8 / 256 K x 16)
Number of Words 128 k —
Bits per Word 8 bits —
Status RoHS RoHS Compliant Compliant
Packaging Tape & Reel (T/R) —
Operating Voltage — 3.3 V (3.0 V min, 3.6 V max)
Bus Width — x8 / x16 selectable (BYTE pin)
STORE Time (typical) — [DATA_NEEDED: STORE time in ms]
RECALL Time (typical) — [DATA_NEEDED: RECALL time in ms]
Active Supply Current (Icc) — [DATA_NEEDED: Icc active mA]
Standby Current (Isb) — [DATA_NEEDED: Isb uA]
Hardware STORE Pin — HSB (active low)
Auto STORE on VCC Drop — Yes (integrated VCc monitor)
Data Retention — [DATA_NEEDED: retention years]

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