EP2S130F1020C3 vs EP2S180F1020C3 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci EP2S130F1020C3 disebabkan oleh Intel dan EP2S180F1020C3 disebabkan oleh Intel. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr EP2S130F1020C3 EP2S180F1020C3
Merek Intel Intel
Kategori FPGA & CPLD FPGA & CPLD
Status Lingkungan Hidup NRND Obsolete
Series Stratix II Stratix II
Family Stratix II —
Logic Elements / Cells 132,540 —
Logic Array Blocks (LABs) 6,627 8,970
User I/Os 742 —
Embedded Memory (TriMatrix) [DATA_NEEDED: total Mbits] —
DSP / Multiplier Blocks [DATA_NEEDED: DSP block count] —
Transceivers Logic-rich SKU (no transceiver; transceiver variants use different suffix) —
Maximum Internal Frequency 778.82 MHz (per family datasheet) —
Process Technology 90 nm —
Core Supply Voltage (VCCINT) 1.15 V to 1.25 V —
Kemasan / Case 1020-BBGA (FC-FBGA), 33x33 mm —
Supplier Device Package 1020-FBGA (33x33) —
Jenis Pemasangan Surface Mount Surface Mount
Suhu Operasi 0C to +85C (commercial, 'C' speed grade) Commercial (0C to +85C)
Speed Grade C3 (commercial, -3 speed) C3
Status RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Aras MSL [DATA_NEEDED: MSL level] —
Device Family — EP2S180
Equivalent Logic Elements (LEs) — 179,400
Embedded Memory (RAM bits) — 9,383,040
Maximum User I/Os — 742
Kemasan — 1020-ball FBGA (flip-chip BGA)
Process Node — 90 nm, all-layer copper SRAM
Core Voltage — 1.2 V
DSP Blocks — Dedicated high-speed multipliers
Memory Interfaces Supported — DDR2 SDRAM, QDRII SRAM, RLDRAM II
I/O Standards — LVDS, LVPECL, SSTL, HSTL
Configuration Method — SRAM-based (volatile, requires boot device)
Development Toolchain — Quartus II / Quartus Prime

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