EP2S130F1020C3 vs EP2S180F1020C3 比較

詳細並排比較 EP2S130F1020C3 由 Intel 與 EP2S180F1020C3 由 Intel. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 EP2S130F1020C3 EP2S180F1020C3
品牌 Intel Intel
類別 FPGA & CPLD FPGA & CPLD
生命週期狀態 NRND Obsolete
Series Stratix II Stratix II
Family Stratix II —
Logic Elements / Cells 132,540 —
Logic Array Blocks (LABs) 6,627 8,970
User I/Os 742 —
Embedded Memory (TriMatrix) [DATA_NEEDED: total Mbits] —
DSP / Multiplier Blocks [DATA_NEEDED: DSP block count] —
Transceivers Logic-rich SKU (no transceiver; transceiver variants use different suffix) —
Maximum Internal Frequency 778.82 MHz (per family datasheet) —
Process Technology 90 nm —
Core Supply Voltage (VCCINT) 1.15 V to 1.25 V —
封裝 / 外殼 1020-BBGA (FC-FBGA), 33x33 mm —
Supplier Device Package 1020-FBGA (33x33) —
安裝類型 Surface Mount Surface Mount
工作溫度 0C to +85C (commercial, 'C' speed grade) Commercial (0C to +85C)
Speed Grade C3 (commercial, -3 speed) C3
RoHS 狀態 [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
MSL 等級 [DATA_NEEDED: MSL level] —
Device Family — EP2S180
Equivalent Logic Elements (LEs) — 179,400
Embedded Memory (RAM bits) — 9,383,040
Maximum User I/Os — 742
封裝 — 1020-ball FBGA (flip-chip BGA)
Process Node — 90 nm, all-layer copper SRAM
Core Voltage — 1.2 V
DSP Blocks — Dedicated high-speed multipliers
Memory Interfaces Supported — DDR2 SDRAM, QDRII SRAM, RLDRAM II
I/O Standards — LVDS, LVPECL, SSTL, HSTL
Configuration Method — SRAM-based (volatile, requires boot device)
Development Toolchain — Quartus II / Quartus Prime

資料表與資源

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