EP3SE260F1152C4 vs EP3SE260F1152C3N Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci EP3SE260F1152C4 disebabkan oleh Intel dan EP3SE260F1152C3N disebabkan oleh Intel. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr EP3SE260F1152C4 EP3SE260F1152C3N
Merek Intel Intel
Kategori FPGA & CPLD FPGA & CPLD
Status Lingkungan Hidup NRND Aktif
Series Stratix III E (Enhanced) Stratix III E
Family Stratix III —
Logic Elements (LE) 255,000 —
Logic Array Blocks (LABs) 10,200 10,200
Embedded Memory Bits 16,672,768 16,672,768 bits
User I/O Count 744 744
Process Technology 65 nm CMOS (TSMC) 65 nm
Core Voltage 1.1 V 1.1 V
Speed Grade C4 (slowest commercial grade) —
Maximum Internal Frequency ~450 MHz (per FPGAkey listing) —
Kemasan 1152-pin FC-FBGA (Flip-Chip Fine-pitch BGA) 1152-BBGA, FCBGA
Package Code BGA, square —
I/O Standards Supported LVDS, LVTTL, LVCMOS, SSTL, HSTL —
Configuration Modes Passive Serial, Fast Passive Parallel, JTAG AS, AP, PS, FPP, JTAG
DSP Blocks (18x18 Multipliers) 384 —
PLL Count [DATA_NEEDED: PLL count] —
Transceivers External PHY interface only (no integrated GXB) Integrated high-speed transceivers
Status RoHS Compliant (per distributor listings) Compliant
Suhu Operasi Commercial (0C to +85C) - inferred from speed grade C4 0 C to +85 C (Commercial)
Jenis Pemasangan Surface Mount (BGA) Surface Mount
Logic Elements / Cells — 255,000
DSP Blocks — Yes (dedicated multiplier/accumulator)
Embedded Memory Type — TriMatrix (true dual-port, FIFO, ROM, RAM)
External Memory Support — DDR3, DDR2, QDR II+, RLDRAM II
Partial Reconfiguration — Supported
Programmable Power Technology — Yes (up to 50% dynamic power reduction)

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