EP3SE260F1152C4 vs EP3SE260F1152C3N 比較

詳細並排比較 EP3SE260F1152C4 由 Intel 與 EP3SE260F1152C3N 由 Intel. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 EP3SE260F1152C4 EP3SE260F1152C3N
品牌 Intel Intel
類別 FPGA & CPLD FPGA & CPLD
生命週期狀態 NRND 啟用中
Series Stratix III E (Enhanced) Stratix III E
Family Stratix III —
Logic Elements (LE) 255,000 —
Logic Array Blocks (LABs) 10,200 10,200
Embedded Memory Bits 16,672,768 16,672,768 bits
User I/O Count 744 744
Process Technology 65 nm CMOS (TSMC) 65 nm
Core Voltage 1.1 V 1.1 V
Speed Grade C4 (slowest commercial grade) —
Maximum Internal Frequency ~450 MHz (per FPGAkey listing) —
封裝 1152-pin FC-FBGA (Flip-Chip Fine-pitch BGA) 1152-BBGA, FCBGA
Package Code BGA, square —
I/O Standards Supported LVDS, LVTTL, LVCMOS, SSTL, HSTL —
Configuration Modes Passive Serial, Fast Passive Parallel, JTAG AS, AP, PS, FPP, JTAG
DSP Blocks (18x18 Multipliers) 384 —
PLL Count [DATA_NEEDED: PLL count] —
Transceivers External PHY interface only (no integrated GXB) Integrated high-speed transceivers
RoHS 狀態 Compliant (per distributor listings) Compliant
工作溫度 Commercial (0C to +85C) - inferred from speed grade C4 0 C to +85 C (Commercial)
安裝類型 Surface Mount (BGA) Surface Mount
Logic Elements / Cells — 255,000
DSP Blocks — Yes (dedicated multiplier/accumulator)
Embedded Memory Type — TriMatrix (true dual-port, FIFO, ROM, RAM)
External Memory Support — DDR3, DDR2, QDR II+, RLDRAM II
Partial Reconfiguration — Supported
Programmable Power Technology — Yes (up to 50% dynamic power reduction)

資料表與資源

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