EP3SL50F780C4LN vs EP3SE50F780C4LN Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci EP3SL50F780C4LN disebabkan oleh Intel dan EP3SE50F780C4LN disebabkan oleh Intel. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr EP3SL50F780C4LN EP3SE50F780C4LN
Merek Intel Intel
Kategori FPGA & CPLD FPGA & CPLD
Status Lingkungan Hidup NRND Aktif
Series Stratix III L —
Family Stratix III L (Low-Power) Stratix III E
Logic Elements (LE) 47,500 —
Logic Array Blocks (LAB) 1,900 —
Total RAM Bits 2,184,192 —
User I/O Pins 488 —
Kemasan 780-BBGA, FCBGA (29x29 mm) 780-ball FC-FBGA
Jenis Pemasangan Surface Mount Surface Mount (BGA)
Process Technology 65 nm —
Core Voltage (VCCINT) 0.86 V to 1.15 V —
Suhu Operasi 0C to +85C (Commercial) 0°C to 85°C (Commercial)
Speed Grade C4 C4
Lead-Free / RoHS Yes (LN suffix indicates lead-free, enhanced) Yes (L suffix)
Aras MSL [DATA_NEEDED: MSL moisture sensitivity level] —
Transceivers [DATA_NEEDED: number of integrated transceivers for F780 package] —
DSP Blocks [DATA_NEEDED: 18x18 multiplier count for EP3SL50] Yes (embedded multipliers)
Configuration SRAM-based, configured via Quartus II —
Logic Elements — 47,500
LABs (Logic Array Blocks) — 1,900
Embedded Memory — 5,760,000 bits
User I/Os — 488
Process Node — 65 nm
Core Voltage — 0.9 V
Maximum Toggle Frequency — 375 MHz
Configuration Modes — Passive Serial, Fast Passive, Active Serial (AS), Active Parallel (AP), JTAG
Block RAM Type — M9K + M144K
Memory Architecture — SRAM-based, reprogrammable
Status RoHS — Compliant

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