EP3SL50F780C4LN vs EP3SE50F780C4LN 比較

詳細並排比較 EP3SL50F780C4LN 由 Intel 與 EP3SE50F780C4LN 由 Intel. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 EP3SL50F780C4LN EP3SE50F780C4LN
品牌 Intel Intel
類別 FPGA & CPLD FPGA & CPLD
生命週期狀態 NRND 啟用中
Series Stratix III L —
Family Stratix III L (Low-Power) Stratix III E
Logic Elements (LE) 47,500 —
Logic Array Blocks (LAB) 1,900 —
Total RAM Bits 2,184,192 —
User I/O Pins 488 —
封裝 780-BBGA, FCBGA (29x29 mm) 780-ball FC-FBGA
安裝類型 Surface Mount Surface Mount (BGA)
Process Technology 65 nm —
Core Voltage (VCCINT) 0.86 V to 1.15 V —
工作溫度 0C to +85C (Commercial) 0°C to 85°C (Commercial)
Speed Grade C4 C4
Lead-Free / RoHS Yes (LN suffix indicates lead-free, enhanced) Yes (L suffix)
MSL 等級 [DATA_NEEDED: MSL moisture sensitivity level] —
Transceivers [DATA_NEEDED: number of integrated transceivers for F780 package] —
DSP Blocks [DATA_NEEDED: 18x18 multiplier count for EP3SL50] Yes (embedded multipliers)
Configuration SRAM-based, configured via Quartus II —
Logic Elements — 47,500
LABs (Logic Array Blocks) — 1,900
Embedded Memory — 5,760,000 bits
User I/Os — 488
Process Node — 65 nm
Core Voltage — 0.9 V
Maximum Toggle Frequency — 375 MHz
Configuration Modes — Passive Serial, Fast Passive, Active Serial (AS), Active Parallel (AP), JTAG
Block RAM Type — M9K + M144K
Memory Architecture — SRAM-based, reprogrammable
RoHS 狀態 — Compliant

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