FQP50N06 vs IRF1010ESTRLPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci FQP50N06 disebabkan oleh onsemi dan IRF1010ESTRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IRF1010ESTRLPBF IRF1010ESTRLPBF - 60V 84A N-Channel MOSFET | Infineon

IRF1010ESTRLPBF - 60V 84A N-Channel MOSFET | Infineon

IRF1010ESTRLPBF ✓ Aktif

Pengandingan Spesifikasi

Parametr FQP50N06 IRF1010ESTRLPBF
Merek onsemi Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer onsemi (formerly Fairchild Semiconductor) —
Part Number FQP50N06 —
Jenis Transistor N-Channel MOSFET —
Technology Planar Stripe DMOS HEXFET planar
Drain-Source Voltage (V(BR)DSS) 60 V —
Continuous Drain Current (ID) at Tc 50 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Maximum Power Dissipation (PD) at Tc 120 W —
On-Resistance Rds(on) max at VGS=10V [DATA_NEEDED: Rds(on) max] —
On-Resistance Rds(on) typical at VGS=10V 0.022 ohm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) range] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg] 86.6 nC
Gambaran Suhu Operasi -55C to +175C (junction) —
Kemasan TO-220-3 (through-hole) D2PAK (TO-263)
Jenis Pemasangan Through Hole Surface Mount
Channel Mode Enhancement —
Status RoHS Compliant —
Lead-Free Yes —
FET Type — N-Channel
Drain-Source Voltage (Vdss) — 60 V
Continuous Drain Current (Id) @ Tc — 84 A
Power Dissipation (Pd) @ Tc — 200 W
On-Resistance (RDS on) @ VGS=10V — 12 mOhm
Operating Mode — Enhancement
Drive Voltage — 10 V (standard level)
Qualification — JEDEC standard qualified
Structure — Planar cell (wide SOA)
Avalanche Testing — 100% avalanche energy tested
Sourcing — Multi-vendor, broad distribution availability
Pb-Free / RoHS — PBF (Pb-free) suffix

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