FQP50N06 vs IRF1010ESTRLPBF 比較
詳細並排比較 FQP50N06 由 onsemi 與 IRF1010ESTRLPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | FQP50N06 | IRF1010ESTRLPBF |
|---|---|---|
| 品牌 | onsemi | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | onsemi (formerly Fairchild Semiconductor) | — |
| Part Number | FQP50N06 | — |
| 電晶體類型 | N-Channel MOSFET | — |
| Technology | Planar Stripe DMOS | HEXFET planar |
| Drain-Source Voltage (V(BR)DSS) | 60 V | — |
| Continuous Drain Current (ID) at Tc | 50 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Maximum Power Dissipation (PD) at Tc | 120 W | — |
| On-Resistance Rds(on) max at VGS=10V | [DATA_NEEDED: Rds(on) max] | — |
| On-Resistance Rds(on) typical at VGS=10V | 0.022 ohm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) range] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | 86.6 nC |
| 工作溫度範圍 | -55C to +175C (junction) | — |
| 封裝 | TO-220-3 (through-hole) | D2PAK (TO-263) |
| 安裝類型 | Through Hole | Surface Mount |
| Channel Mode | Enhancement | — |
| RoHS 狀態 | Compliant | — |
| Lead-Free | Yes | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (Vdss) | — | 60 V |
| Continuous Drain Current (Id) @ Tc | — | 84 A |
| Power Dissipation (Pd) @ Tc | — | 200 W |
| On-Resistance (RDS on) @ VGS=10V | — | 12 mOhm |
| Operating Mode | — | Enhancement |
| Drive Voltage | — | 10 V (standard level) |
| Qualification | — | JEDEC standard qualified |
| Structure | — | Planar cell (wide SOA) |
| Avalanche Testing | — | 100% avalanche energy tested |
| Sourcing | — | Multi-vendor, broad distribution availability |
| Pb-Free / RoHS | — | PBF (Pb-free) suffix |