H5AN4G6NBJR-PBC vs H5AN4G6NBJR-VKC Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN4G6NBJR-PBC disebabkan oleh SK hynix dan H5AN4G6NBJR-VKC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr H5AN4G6NBJR-PBC H5AN4G6NBJR-VKC
Merek SK hynix SK hynix
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Jenis Ingatan DDR4 SDRAM DDR4 SDRAM
Memory Density 4 Gbit —
Organisasi 256M x 16 (268435456 words x 16 bits) —
Supply Voltage (VDD) 1.2 V 1.2 V nominal (1.14 V to 1.26 V)
Antaramuka DDR4 (double data rate, synchronous) Parallel
Package Code TFBGA —
Kemasan FBGA-96 (PBGA96), rectangular FBGA-96 / TFBGA (PBGA96)
Number of Terminals 96 —
Jenis Pemasangan Surface Mount Surface Mount
Ciri-ciri Auto self-refresh, data mask, asynchronous reset, dynamic ODT, ZQ calibration, write leveling, CRC —
Suhu Operasi [DATA_NEEDED: temperature range for -C grade] -40C to +95C
Data Rate / Speed Grade [DATA_NEEDED: speed grade PBC data rate] —
Latensi CAS [DATA_NEEDED: CAS latency for PBC speed grade] —
Process CMOS —
Lead-Free / Halogen-Free Yes (per family datasheet, Lead-Free & Halogen-Free) —
Temperature Grade OTHER (per distributor listing) —
Saiz Ingatan — 4 Gbit
Memory Organization — 256M x 16
Kadar Data — 2666 Mbps
Clock Frequency — 1.6 GHz (internal reference per distributor data)
Operating Current — 38 mA (typical, per distributor data)
Technology — CMOS
Body Size — 13 mm, 1.2 mm profile, 0.8 mm ball pitch
Termination — Dynamic on-chip termination (ODT)
Calibration — ZQ calibration; write leveling
Protection Functions — Asynchronous reset; CRC; data mask
Refresh — Auto self-refresh
Status RoHS — Compliant
Packaging — Tray

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