H5AN4G6NBJR-PBC vs H5AN4G6NBJR-VKC 比較
詳細並排比較 H5AN4G6NBJR-PBC 由 SK hynix 與 H5AN4G6NBJR-VKC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | H5AN4G6NBJR-PBC | H5AN4G6NBJR-VKC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Memory Density | 4 Gbit | — |
| 組織 | 256M x 16 (268435456 words x 16 bits) | — |
| Supply Voltage (VDD) | 1.2 V | 1.2 V nominal (1.14 V to 1.26 V) |
| 介面 | DDR4 (double data rate, synchronous) | Parallel |
| Package Code | TFBGA | — |
| 封裝 | FBGA-96 (PBGA96), rectangular | FBGA-96 / TFBGA (PBGA96) |
| Number of Terminals | 96 | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 功能特色 | Auto self-refresh, data mask, asynchronous reset, dynamic ODT, ZQ calibration, write leveling, CRC | — |
| 工作溫度 | [DATA_NEEDED: temperature range for -C grade] | -40C to +95C |
| Data Rate / Speed Grade | [DATA_NEEDED: speed grade PBC data rate] | — |
| CAS 延遲 | [DATA_NEEDED: CAS latency for PBC speed grade] | — |
| Process | CMOS | — |
| Lead-Free / Halogen-Free | Yes (per family datasheet, Lead-Free & Halogen-Free) | — |
| Temperature Grade | OTHER (per distributor listing) | — |
| 記憶體容量 | — | 4 Gbit |
| Memory Organization | — | 256M x 16 |
| 資料速率 | — | 2666 Mbps |
| Clock Frequency | — | 1.6 GHz (internal reference per distributor data) |
| Operating Current | — | 38 mA (typical, per distributor data) |
| Technology | — | CMOS |
| Body Size | — | 13 mm, 1.2 mm profile, 0.8 mm ball pitch |
| Termination | — | Dynamic on-chip termination (ODT) |
| Calibration | — | ZQ calibration; write leveling |
| Protection Functions | — | Asynchronous reset; CRC; data mask |
| Refresh | — | Auto self-refresh |
| RoHS 狀態 | — | Compliant |
| Packaging | — | Tray |