H5AN4G8NBJR-UHI vs H5AN4G8NBJR-RDC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN4G8NBJR-UHI disebabkan oleh SK hynix dan H5AN4G8NBJR-RDC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5AN4G8NBJR-UHI | H5AN4G8NBJR-RDC |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | 4 Gbit |
| Organisasi | 512M x 8 | 512M x 8 |
| Speed Grade | DDR4-2400 (PC4-19200) | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Kemasan | FBGA-78 (78-ball fine-pitch BGA) | 78-ball FBGA |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Grade | Industrial (-UHI suffix) | — |
| Kadar Data | 2400 MT/s | [DATA_NEEDED: speed grade Mbps] |
| Antaramuka | JEDEC DDR4 SDRAM | DDR4 (Double Data Rate IV) |
| Bank Architecture | DDR4 bank group architecture | 8 banks with 4 bank groups (x8) |
| Refresh | Self-refresh and auto-refresh support | Auto-refresh and self-refresh |
| Termination | On-die termination (ODT) | On-Die Termination (ODT) |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | — |
| Latensi CAS | [DATA_NEEDED: CAS latency at DDR4-2400] | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | Lead-Free & Halogen-Free (RoHS Compliant) |
| Aras MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Tegangan Pemberi Arus | — | [DATA_NEEDED: VDD supply voltage] |
| Temperature Grade | — | [DATA_NEEDED: operating temperature range] |
| Process Technology | — | CMOS |
| Manufacturer | — | SK hynix |
| Family Series | — | H5AN4G4/8/6NBJR |