H5AN4G8NBJR-UHI vs H5AN4G8NBJR-RDC 比較
詳細並排比較 H5AN4G8NBJR-UHI 由 SK hynix 與 H5AN4G8NBJR-RDC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | H5AN4G8NBJR-UHI | H5AN4G8NBJR-RDC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | 4 Gbit |
| 組織 | 512M x 8 | 512M x 8 |
| Speed Grade | DDR4-2400 (PC4-19200) | — |
| Supply Voltage (VDD) | 1.2 V | — |
| 封裝 | FBGA-78 (78-ball fine-pitch BGA) | 78-ball FBGA |
| 安裝類型 | Surface Mount | Surface Mount |
| Grade | Industrial (-UHI suffix) | — |
| 資料速率 | 2400 MT/s | [DATA_NEEDED: speed grade Mbps] |
| 介面 | JEDEC DDR4 SDRAM | DDR4 (Double Data Rate IV) |
| Bank Architecture | DDR4 bank group architecture | 8 banks with 4 bank groups (x8) |
| Refresh | Self-refresh and auto-refresh support | Auto-refresh and self-refresh |
| Termination | On-die termination (ODT) | On-Die Termination (ODT) |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | — |
| CAS 延遲 | [DATA_NEEDED: CAS latency at DDR4-2400] | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | Lead-Free & Halogen-Free (RoHS Compliant) |
| MSL 等級 | [DATA_NEEDED: moisture sensitivity level] | — |
| 供應電壓 | — | [DATA_NEEDED: VDD supply voltage] |
| Temperature Grade | — | [DATA_NEEDED: operating temperature range] |
| Process Technology | — | CMOS |
| Manufacturer | — | SK hynix |
| Family Series | — | H5AN4G4/8/6NBJR |