H5AN8G8NCJR-PBC vs H5AN8G8NCJR-RDC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN8G8NCJR-PBC disebabkan oleh SK hynix dan H5AN8G8NCJR-RDC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5AN8G8NCJR-PBC | H5AN8G8NCJR-RDC |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Saiz Ingatan | 8 Gb (1 GB) | — |
| Organisasi | 1G x 8 (x8) | x8 |
| Supply Voltage (VDD) | 1.2 V | — |
| Interface Voltage (VDDQ) | 1.2 V (SSTL12) | — |
| Kadar Data | [DATA_NEEDED: data rate for -PBC speed grade (Mbps/MT/s)] | up to 2666 Mbps |
| Kemasan | 78-ball FBGA | 78-ball FBGA |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Architecture | CMOS, fully synchronous, dual-edge clocked | — |
| Bank Structure | 8 internal banks, bank-group architecture | — |
| Burst Length | BL8 | BL8 |
| Ciri-ciri | ODT, DM, DQS strobes, programmable CAS latency, self-refresh | — |
| Die Revision Family | CJR (H5AN8G8NCJR-xxC) | — |
| Status RoHS | Lead-Free & Halogen-Free | Compliant |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range for -RDC suffix] |
| Refresh | Auto-refresh and self-refresh | — |
| Typical Applications | PC/server main memory, embedded solder-down memory | — |
| Density | — | 8 Gb (1 GB) |
| Tegangan Pemberi Arus | — | 1.2 V (VDD) |
| Antaramuka | — | DDR4 (JEDEC standard) |
| Bank Architecture | — | 4 bank groups x 4 banks |
| Latensi CAS | — | [DATA_NEEDED: CAS latency for -RDC speed grade] |
| Generation | — | C-die family (NCJR) |
| Lead Free | — | Yes |
| Boson Bebas | — | Yes |