H5AN8G8NCJR-PBC vs H5AN8G8NCJR-RDC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5AN8G8NCJR-PBC sa pamamagitan ng SK hynix at H5AN8G8NCJR-RDC sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | H5AN8G8NCJR-PBC | H5AN8G8NCJR-RDC |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Laki ng Memory | 8 Gb (1 GB) | — |
| Organisasyon | 1G x 8 (x8) | x8 |
| Supply Voltage (VDD) | 1.2 V | — |
| Interface Voltage (VDDQ) | 1.2 V (SSTL12) | — |
| Rate ng Data | [DATA_NEEDED: data rate for -PBC speed grade (Mbps/MT/s)] | up to 2666 Mbps |
| Packhaging | 78-ball FBGA | 78-ball FBGA |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Architecture | CMOS, fully synchronous, dual-edge clocked | — |
| Bank Structure | 8 internal banks, bank-group architecture | — |
| Burst Length | BL8 | BL8 |
| Mga Karakteristika | ODT, DM, DQS strobes, programmable CAS latency, self-refresh | — |
| Die Revision Family | CJR (H5AN8G8NCJR-xxC) | — |
| Tindminan RoHS | Lead-Free & Halogen-Free | Compliant |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range for -RDC suffix] |
| Refresh | Auto-refresh and self-refresh | — |
| Typical Applications | PC/server main memory, embedded solder-down memory | — |
| Density | — | 8 Gb (1 GB) |
| Volte ng Pagbibigay | — | 1.2 V (VDD) |
| Interface | — | DDR4 (JEDEC standard) |
| Bank Architecture | — | 4 bank groups x 4 banks |
| Latensya ng CAS | — | [DATA_NEEDED: CAS latency for -RDC speed grade] |
| Generation | — | C-die family (NCJR) |
| Lead Free | — | Yes |
| Wala sa Halogen | — | Yes |