H5AN8G8NCJR-PBC vs H5AN8G8NCJR-RDC 比較
詳細並排比較 H5AN8G8NCJR-PBC 由 SK hynix 與 H5AN8G8NCJR-RDC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | H5AN8G8NCJR-PBC | H5AN8G8NCJR-RDC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| 記憶體容量 | 8 Gb (1 GB) | — |
| 組織 | 1G x 8 (x8) | x8 |
| Supply Voltage (VDD) | 1.2 V | — |
| Interface Voltage (VDDQ) | 1.2 V (SSTL12) | — |
| 資料速率 | [DATA_NEEDED: data rate for -PBC speed grade (Mbps/MT/s)] | up to 2666 Mbps |
| 封裝 | 78-ball FBGA | 78-ball FBGA |
| 安裝類型 | Surface Mount | Surface Mount |
| Architecture | CMOS, fully synchronous, dual-edge clocked | — |
| Bank Structure | 8 internal banks, bank-group architecture | — |
| Burst Length | BL8 | BL8 |
| 功能特色 | ODT, DM, DQS strobes, programmable CAS latency, self-refresh | — |
| Die Revision Family | CJR (H5AN8G8NCJR-xxC) | — |
| RoHS 狀態 | Lead-Free & Halogen-Free | Compliant |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range for -RDC suffix] |
| Refresh | Auto-refresh and self-refresh | — |
| Typical Applications | PC/server main memory, embedded solder-down memory | — |
| Density | — | 8 Gb (1 GB) |
| 供應電壓 | — | 1.2 V (VDD) |
| 介面 | — | DDR4 (JEDEC standard) |
| Bank Architecture | — | 4 bank groups x 4 banks |
| CAS 延遲 | — | [DATA_NEEDED: CAS latency for -RDC speed grade] |
| Generation | — | C-die family (NCJR) |
| Lead Free | — | Yes |
| 無鹵素 | — | Yes |