H5AN8G8NCJR-RDC vs H5AN8G8NCJR-PBC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN8G8NCJR-RDC disebabkan oleh SK hynix dan H5AN8G8NCJR-PBC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5AN8G8NCJR-RDC | H5AN8G8NCJR-PBC |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb (1 GB) | — |
| Organisasi | x8 | 1G x 8 (x8) |
| Kadar Data | up to 2666 Mbps | [DATA_NEEDED: data rate for -PBC speed grade (Mbps/MT/s)] |
| Tegangan Pemberi Arus | 1.2 V (VDD) | — |
| Antaramuka | DDR4 (JEDEC standard) | — |
| Bank Architecture | 4 bank groups x 4 banks | — |
| Burst Length | BL8 | BL8 |
| Kemasan | 78-ball FBGA | 78-ball FBGA |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | [DATA_NEEDED: operating temperature range for -RDC suffix] | [DATA_NEEDED: operating temperature range] |
| Latensi CAS | [DATA_NEEDED: CAS latency for -RDC speed grade] | — |
| Generation | C-die family (NCJR) | — |
| Lead Free | Yes | — |
| Boson Bebas | Yes | — |
| Status RoHS | Compliant | Lead-Free & Halogen-Free |
| Saiz Ingatan | — | 8 Gb (1 GB) |
| Supply Voltage (VDD) | — | 1.2 V |
| Interface Voltage (VDDQ) | — | 1.2 V (SSTL12) |
| Architecture | — | CMOS, fully synchronous, dual-edge clocked |
| Bank Structure | — | 8 internal banks, bank-group architecture |
| Ciri-ciri | — | ODT, DM, DQS strobes, programmable CAS latency, self-refresh |
| Die Revision Family | — | CJR (H5AN8G8NCJR-xxC) |
| Refresh | — | Auto-refresh and self-refresh |
| Typical Applications | — | PC/server main memory, embedded solder-down memory |