H5AN8G8NCJR-RDC vs H5AN8G8NCJR-PBC 比較
詳細並排比較 H5AN8G8NCJR-RDC 由 SK hynix 與 H5AN8G8NCJR-PBC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | H5AN8G8NCJR-RDC | H5AN8G8NCJR-PBC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb (1 GB) | — |
| 組織 | x8 | 1G x 8 (x8) |
| 資料速率 | up to 2666 Mbps | [DATA_NEEDED: data rate for -PBC speed grade (Mbps/MT/s)] |
| 供應電壓 | 1.2 V (VDD) | — |
| 介面 | DDR4 (JEDEC standard) | — |
| Bank Architecture | 4 bank groups x 4 banks | — |
| Burst Length | BL8 | BL8 |
| 封裝 | 78-ball FBGA | 78-ball FBGA |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | [DATA_NEEDED: operating temperature range for -RDC suffix] | [DATA_NEEDED: operating temperature range] |
| CAS 延遲 | [DATA_NEEDED: CAS latency for -RDC speed grade] | — |
| Generation | C-die family (NCJR) | — |
| Lead Free | Yes | — |
| 無鹵素 | Yes | — |
| RoHS 狀態 | Compliant | Lead-Free & Halogen-Free |
| 記憶體容量 | — | 8 Gb (1 GB) |
| Supply Voltage (VDD) | — | 1.2 V |
| Interface Voltage (VDDQ) | — | 1.2 V (SSTL12) |
| Architecture | — | CMOS, fully synchronous, dual-edge clocked |
| Bank Structure | — | 8 internal banks, bank-group architecture |
| 功能特色 | — | ODT, DM, DQS strobes, programmable CAS latency, self-refresh |
| Die Revision Family | — | CJR (H5AN8G8NCJR-xxC) |
| Refresh | — | Auto-refresh and self-refresh |
| Typical Applications | — | PC/server main memory, embedded solder-down memory |