H5AN8G8NCJR-VKC vs H5AN8G8NCJR-RDC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN8G8NCJR-VKC disebabkan oleh SK hynix dan H5AN8G8NCJR-RDC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5AN8G8NCJR-VKC | H5AN8G8NCJR-RDC |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM (volatile) | DDR4 SDRAM |
| Saiz Ingatan | 8 Gbit | — |
| Memory Organization | 1G x 8 | — |
| Kadar Data | 2666 Mbps/pin | up to 2666 Mbps |
| Clock Frequency | 1.6 GHz | — |
| Supply Voltage (VDD) | 1.14 V to 1.26 V (1.2 V class) | — |
| Operating Current (typ) | 30 mA | — |
| Standby Current (typ) | 3 mA | — |
| Suhu Operasi | 0C to +85C | [DATA_NEEDED: operating temperature range for -RDC suffix] |
| Kemasan | FBGA-78 (78-ball fine-pitch BGA) | 78-ball FBGA |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Antaramuka | Parallel (DDR4) | DDR4 (JEDEC standard) |
| Auto Self-Refresh | Yes | — |
| Data Mask Function | Yes | — |
| Dynamic On-Chip Termination (ODT) | Yes | — |
| Asynchronous Reset | Yes | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| CRC Function | Yes | — |
| Auto Precharge | Yes | — |
| Status RoHS | Compliant | Compliant |
| Latensi CAS | [DATA_NEEDED: CAS Latency] | [DATA_NEEDED: CAS latency for -RDC speed grade] |
| Refresh Rate | [DATA_NEEDED: refresh period] | — |
| Density | — | 8 Gb (1 GB) |
| Organisasi | — | x8 |
| Tegangan Pemberi Arus | — | 1.2 V (VDD) |
| Bank Architecture | — | 4 bank groups x 4 banks |
| Burst Length | — | BL8 |
| Generation | — | C-die family (NCJR) |
| Lead Free | — | Yes |
| Boson Bebas | — | Yes |