H5AN8G8NCJR-VKC vs H5AN8G8NCJR-RDC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5AN8G8NCJR-VKC sa pamamagitan ng SK hynix at H5AN8G8NCJR-RDC sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | H5AN8G8NCJR-VKC | H5AN8G8NCJR-RDC |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM (volatile) | DDR4 SDRAM |
| Laki ng Memory | 8 Gbit | — |
| Memory Organization | 1G x 8 | — |
| Rate ng Data | 2666 Mbps/pin | up to 2666 Mbps |
| Clock Frequency | 1.6 GHz | — |
| Supply Voltage (VDD) | 1.14 V to 1.26 V (1.2 V class) | — |
| Operating Current (typ) | 30 mA | — |
| Standby Current (typ) | 3 mA | — |
| Temperature na Operasyon | 0C to +85C | [DATA_NEEDED: operating temperature range for -RDC suffix] |
| Packhaging | FBGA-78 (78-ball fine-pitch BGA) | 78-ball FBGA |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Interface | Parallel (DDR4) | DDR4 (JEDEC standard) |
| Auto Self-Refresh | Yes | — |
| Data Mask Function | Yes | — |
| Dynamic On-Chip Termination (ODT) | Yes | — |
| Asynchronous Reset | Yes | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| CRC Function | Yes | — |
| Auto Precharge | Yes | — |
| Tindminan RoHS | Compliant | Compliant |
| Latensya ng CAS | [DATA_NEEDED: CAS Latency] | [DATA_NEEDED: CAS latency for -RDC speed grade] |
| Refresh Rate | [DATA_NEEDED: refresh period] | — |
| Density | — | 8 Gb (1 GB) |
| Organisasyon | — | x8 |
| Volte ng Pagbibigay | — | 1.2 V (VDD) |
| Bank Architecture | — | 4 bank groups x 4 banks |
| Burst Length | — | BL8 |
| Generation | — | C-die family (NCJR) |
| Lead Free | — | Yes |
| Wala sa Halogen | — | Yes |